NXP Semiconductors
BT151X-800R
SCR
BT151X-800R All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 16 March 2014 6 / 12
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from anode to external heatsink;
f = 1 MHz; T
h
= 25 °C
- 10 - pF
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C; Fig. 7 - 2 15 mA
I
L
latching current V
D
= 12 V; I
G
= 0.1 A; T
j
= 25 °C; Fig. 8 - 10 40 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - 7 20 mA
V
T
on-state voltage I
T
= 23 A; T
j
= 25 °C; Fig. 10 - 1.4 1.75 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.6 1 VV
GT
gate trigger voltage
V
D
= 800 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
I
R
reverse current V
R
= 800 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
V
DM
= 536 V; T
j
= 125 °C; R
GK
= 100 Ω;
(V
DM
= 67% of V
DRM
); exponential
waveform; gate open circuit; Fig. 12
200 1000 - V/µsdV
D
/dt rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
=
67% of V
DRM
); exponential waveform;
Fig. 12
50 130 - V/µs
t
gt
gate-controlled turn-on
time
I
TM
= 40 A; V
D
= 800 V; I
G
= 100 mA;
dI
G
/dt = 5 A/µs; T
j
= 25 °C
- 2 - µs
t
q
commutated turn-off
time
V
DM
= 536 V; T
j
= 125 °C; I
TM
= 20 A;
V
R
= 25 V; (dI
T
/dt)
M
= 30 A/µs; dV
D
/
dt = 50 V/µs; R
GK
= 100 Ω; (V
DM
= 67%
of V
DRM
)
- 70 - µs
