2010-2011 Microchip Technology Inc. Preliminary DS22237C-page 7
25A512
2.0 FUNCTIONAL DESCRIPTION
2.1 Principles of Operation
The 25A512 is a 65,536 byte Serial EEPROM
designed to interface directly with the Serial Periph-
eral Interface (SPI) port of many of today’s popular
microcontroller families, including Microchip’s PIC
®
microcontrollers. It may also interface with microcon-
trollers that do not have a built-in SPI port by using
discrete I/O lines programmed properly in firmware to
match the SPI protocol.
The 25A512 contains an 8-bit instruction register. The
device is accessed via the SI pin, with data being
clocked in on the rising edge of SCK. The CS
pin must
be low and the HOLD
pin must be high for the entire
operation.
Table 2-1 contains a list of the possible instruction
bytes and format for device operation. All instructions,
addresses, and data are transferred MSB first, LSB
last.
Data (SI) is sampled on the first rising edge of SCK
after CS
goes low. If the clock line is shared with other
peripheral devices on the SPI bus, the user can assert
the HOLD input and place the 25A512 in ‘HOLD’ mode.
After releasing the HOLD
pin, operation will resume
from the point when the HOLD
was asserted.
BLOCK DIAGRAM
TABLE 2-1: INSTRUCTION SET
SI
SO
SCK
CS
HOLD
WP
STATUS
Register
I/O Control
Memory
Control
Logic
X
Dec
HV Generator
EEPROM
Array
Page Latches
Y Decoder
Sense Amp.
R/W Control
Logic
VCC
VSS
Instruction Name Instruction Format Description
READ 0000 0011 Read data from memory array beginning at selected address
WRITE 0000 0010 Write data to memory array beginning at selected address
WREN 0000 0110 Set the write enable latch (enable write operations)
WRDI 0000 0100 Reset the write enable latch (disable write operations)
RDSR 0000 0101 Read STATUS register
WRSR 0000 0001 Write STATUS register
PE 0100 0010 Page Erase – erase one page in memory array
SE 1101 1000 Sector Erase – erase one sector in memory array
CE 1100 0111 Chip Erase – erase all sectors in memory array
RDID 1010 1011 Release from Deep power-down and read electronic signature
DPD 1011 1001 Deep Power-Down mode
25A512
DS22237C-page 8 Preliminary 2010-2011 Microchip Technology Inc.
Read Sequence
The device is selected by pulling CS low. The 8-bit
READ instruction is transmitted to the 25A512 followed
by the 16-bit address. After the correct READ instruction
and address are sent, the data stored in the memory at
the selected address is shifted out on the SO pin. The
data stored in the memory at the next address can be
read sequentially by continuing to provide clock pulses.
The internal Address Pointer is automatically incre-
mented to the next higher address after each byte of
data is shifted out. When the highest address is
reached (FFFFh), the address counter rolls over to
address 0000h allowing the read cycle to be continued
indefinitely. The READ instruction is terminated by rais-
ing the CS
pin (Figure 2-1).
FIGURE 2-1: READ SEQUENCE
SO
SI
SCK
CS
0 234567891011 21222324252627282930311
0100000115 14 13 12 210
76543210
Instruction 16-bit Address
Data Out
High-Impedance
2010-2011 Microchip Technology Inc. Preliminary DS22237C-page 9
25A512
2.2 Write Sequence
Prior to any attempt to write data to the 25A512, the
write enable latch must be set by issuing the WREN
instruction (Figure 2-4). This is done by setting CS
low
and then clocking out the proper instruction into the
25A512. After all eight bits of the instruction are trans-
mitted, the CS
must be brought high to set the write
enable latch. If the write operation is initiated immedi-
ately after the WREN instruction without CS being
brought high, the data will not be written to the array
because the write enable latch will not have been
properly set.
A write sequence includes an automatic, self timed
erase cycle. It is not required to erase any portion of the
memory prior to issuing a WRITE instruction.
Once the write enable latch is set, the user may
proceed by setting the CS
low, issuing a WRITE instruc-
tion, followed by the 16-bit address, and then the data
to be written. Up to 128 bytes of data can be sent to the
device before a write cycle is necessary. The only
restriction is that all of the bytes must reside in the
same page.
For the data to be actually written to the array, the CS
must be brought high after the Least Significant bit (D0)
of the n
th
data byte has been clocked in. If CS is
brought high at any other time, the write operation will
not be completed. Refer to Figure 2-2 and Figure 2-3
for more detailed illustrations on the byte write
sequence and the page write sequence, respectively.
While the write is in progress, the STATUS register may
be read to check the status of the WPEN, WIP, WEL,
BP1 and BP0 bits (Figure 2-6). A read attempt of a
memory array location will not be possible during a
write cycle. When the write cycle is completed, the
write enable latch is reset.
FIGURE 2-2: BYTE WRITE SEQUENCE
Note: When doing a write of less than 128 bytes
the data in the rest of the page is refreshed
along with the data bytes being written.
This will force the entire page to endure a
write cycle, for this reason endurance is
specified per page.
Note: Page write operations are limited to writing
bytes within a single physical page,
regardless of the number of bytes
actually being written. Physical page
boundaries start at addresses that are
integer multiples of the page buffer size (or
‘page size’), and end at addresses that are
integer multiples of page size – 1. If a
Page Write command attempts to write
across a physical page boundary, the
result is that the data wraps around to the
beginning of the current page (overwriting
data previously stored there), instead of
being written to the next page as might be
expected. It is therefore necessary for the
application software to prevent page write
operations that would attempt to cross a
page boundary.
SO
SI
CS
91011 2122232425262728293031
0000000115 14 13 12
21076543210
Instruction 16-bit Address Data Byte
High-Impedance
SCK
0 2345671
8
Twc

25A512T-I/ST

Mfr. #:
Manufacturer:
Microchip Technology
Description:
EEPROM 512k 64K X 8 1.8V SER EE IND
Lifecycle:
New from this manufacturer.
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