MC74VHCT259A
http://onsemi.com
4
MAXIMUM RATINGS (Note 1.)
Symbol Parameter Value Unit
V
CC
Positive DC Supply Voltage –0.5 to +7.0 V
V
IN
Digital Input Voltage –0.5 to +7.0 V
V
OUT
DC Output Voltage Output in 3–State
High or Low State
–0.5 to +7.0
–0.5 to V
CC
+0.5
V
I
IK
Input Diode Current –20 mA
I
OK
Output Diode Current 20 mA
I
OUT
DC Output Current, per Pin 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins 75 mA
P
D
Power Dissipation in Still Air SOIC Package
TSSOP
200
180
mW
T
STG
Storage Temperature Range –65 to +150 °C
V
ESD
ESD Withstand Voltage Human Body Model (Note 2.)
Machine Model (Note 3.)
Charged Device Model (Note 4.)
>2000
>200
>2000
V
I
LATCH–UP
Latch–Up Performance Above V
CC
and Below GND at 125°C (Note 5.) 300 mA
JA
Thermal Resistance, Junction to Ambient SOIC Package
TSSOP
143
164
°C/W
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 4.5 5.5 V
V
IN
DC Input Voltage 0 5.5 V
V
OUT
DC Output Voltage Output in 3–State
High or Low State
0
0
5.5
V
CC
V
T
A
Operating Temperature Range, all Package Types –55 125 °C
t
r
, t
f
Input Rise or Fall Time V
CC
= 5.0 V + 0.5 V 0 20 ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 5. Failure Rate vs. Time Junction Temperature
