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93LC66/P

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
2002-2012 Microchip Technology Inc. DS21712C-page 1
93LC46/56/66
Features:
• Single supply with programming operation down
to 2.5V
• Low-power CMOS technology
•100A typical active read current at 2.5V
•3A typical standby current at 2.5V
• ORG pin selectable memory configuration
• 128 x 8- or 64 x 16-bit organization (93LC46)
• 256 x 8- or 128 x 16-bit organization (93LC56)
• 512 x 8 or 256 x 16 bit organization (93LC66)
• Self-timed erase and write cycles
(including auto-erase)
• Automatic ERAL before WRAL
• Power on/off data protection circuitry
• Industry standard 3-wire serial I/O
• Device status signal during erase/write cycles
• Sequential read function
• 1,000,000 E/W cycles ensured
• Data retention > 200 years
• 8-pin PDIP/SOIC
(SOIC in JEDEC standards)
• Temperature ranges supported:
Description:
The Microchip Technology Inc. 93LC46/56/66 are 1K,
2K and 4K low voltage serial Electrically Erasable
PROMs (EEPROM). The device memory is configured
as x8 or x16 bits depending on the external logic of
levels of the ORG pin. Advanced CMOS technology
makes these devices ideal for low power nonvolatile
memory applications. The 93LC Series is available in
standard 8-pin PDIP and surface mount SOIC
packages. The rotated pin-out 93LC46X/56X/66X are
offered in the “SN” package only.
Package Types
Block Diagram
- Industrial (I): -40°C to +85°C
93LC46
93LC56
93LC66
CS
CLK
DI
DO
1
2
3
4
8
7
6
5
V
CC
NU
ORG
V
SS
PDIP/SOIC
NU
V
CC
CS
CLK
1
2
3
4
8
7
6
5
ORG
V
SS
DO
DI
ROTATED SOIC
93LC46X
93LC56X
93LC66X
Data Register
Output
Memory
Array
CLK
VCC VSS
Clock
Mode
Decode
Logic
Register
CS
ORG
DI
Address
Decoder
Address
Counter
Buffer
DO
1K/2K/4K 2.5V Microwire Serial EEPROM
Not recommended for new designs –
Please use 93LC46C, 93LC56C or 93LC66C.
93LC46/56/66
DS21712C-page 2 2002-2012 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
VCC.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS ........................................................................................................ -0.6V to VCC + 1.0V
Storage temperature ...............................................................................................................................-65°C to +150°C
Ambient temperature with power applied................................................................................................-40°C to +125°C
ESD protection on all pins  4kV
DC CHARACTERISTICS
† NOTICE: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
V
CC = +2.5V to +5.5V
Industrial (I): T
A = -40°C to +85°C
Param.
No.
Sym Characteristic Min Typ Max Units Conditions
D1 V
IH1 High-level input voltage 2.0 — VCC +1 V VCC 2.7V
VIH2 0.7 VCC —VCC +1 V VCC 2.7V
D2 V
IL1 Low-level input voltage -0.3 — 0.8 V VCC 2.7V
VIL2 -0.3 — 0.2 VCC VVCC 2.7V
D3 VOL1 Low-level output voltage — — 0.4 V IOL = 2.1 mA, VCC = 4.5V
V
OL2——0.3VIOL = 100 A, VCC = 2.5V
D4 VOH1 High-level output voltage 2.4 — — V IOL = 400 A, VCC = 4.5V
VOH2VCC -0.2 — — V IOL = 100 A, VCC = 2.5V
D5 I
LI Input leakage current — — ±10 AVIN = 0.1V to VCC
D6 ILO Output leakage current — — ±10 AVOUT = 0.1V to VCC
D7 CIN,
C
OUT
Pin capacitance
(all inputs/outputs)
—— 7pFVIN/VOUT = 0V (Note 1 & 2)
T
A = 25°C, FCLK = 1 MHz
D8 I
CC write Operating current — — 3 mA FCLK = 2 MHz, VCC = 5.5V
(Note 2)
D9 I
CC read —
—
—
—
—
100
1
500
—
mA
A
A
F
CLK = 2 MHz, VCC = 5.5V
F
CLK = 1 MHz, VCC = 3.0V
F
CLK = 1 MHz, VCC = 2.5V
D10 I
CCS Standby current —
—
—
—
—
3
100
30
—
A
A
A
CLK = CS = 0V; V
CC = 5.5V
CLK = CS = 0V; V
CC = 3.0V
CLK = CS = 0V; V
CC = 2.5V
ORG, DI = V
SS or VCC
Note 1: This parameter is tested at TA = 25°C and FCLK = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
2002-2012 Microchip Technology Inc. DS21712C-page 3
93LC46/56/66
AC CHARACTERISTICS
FIGURE 1-1: SYNCHRONOUS DATA TIMING
AC CHARACTERISTICS
VCC = +2.5V to +5.5V
Industrial (I): T
A = -40°C to +85°C
Param.
No.
Sym Characteristic Min Typ Max Units Conditions
1F
CLK Clock frequency —
—
—
—
2
1
MHz
MHz
VCC 4.5V
V
CC 4.5V
2TCKH Clock high time 250 — — ns
3T
CKL Clock low time 250 — — ns
4TCSS Chip select setup time 50 — — ns Relative to CLK
5TCSH Chip select hold time 0 — — ns Relative to CLK
6T
CSL Chip select low time 250 — — ns
7TDIS Data input setup time 100 — — ns Relative to CLK
8TDIH Data input hold time 100 — — ns Relative to CLK
9T
PD Data output delay time — — 400 ns CL = 100 pF
10 TCZ Data output disable time — — 100 ns CL = 100 pf (Note 2)
11 TSV Status valid time — — 500 ns CL = 100 pF
12 T
WC Program cycle time — 4 10 ms Erase/Write mode
13 TEC — 8 15 ms ERAL mode (VCC=5V ±10%)
14 TWL — 16 30 ms WRAL mode (VCC=5V ±10%)
15 — Endurance 1M — 1M cycles 25°C, V
CC = 5.0V, Block
mode (Note 3)
Note 1: This parameter is tested at T
A = 25°C and FCLK = 1 MHz.
2: This parameter is periodically sampled and not 100% tested.
3: This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance
™
Model which can be obtained from Microchip’s web site
at: www.microchip.com.
CS
V
IH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VOH
VOL
CLK
DI
DO
(Read)
DO
(Write)
4
7
2
3
8
9
5
9
10
Status Valid
11
10
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

93LC66/P

Mfr. #:
Buy 93LC66/P
Manufacturer:
Microchip Technology
Description:
EEPROM 512x8 Or 256x16
Lifecycle:
New from this manufacturer.
Delivery:
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