IXBF20N300 Datasheet IXBF20N300, 0903250018 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

C

= 25°C to 150°C 3000 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 3000 V

V

GES

Continuous ± 20 V

V

GEM

Transient ± 30 V

I

C25

T

C

= 25°C 34 A

I

C110

T

C

= 110°C 14 A

I

CM

T

C

= 25°C, 1ms 150 A

SSOA V

GE

= 15V, T

VJ

= 125°C, R

G

= 20Ω I

CM

= 130 A

(RBSOA) Clamped Inductive Load 1500 V

P

C

T

C

= 25°C 150 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10 seconds 260 °C

F

C

Mounting Force 20..120 / 4.5..27 Nm/lb.in.

V

ISOL

50/60Hz, 1 Minute 4000 V~

Weight 5 g

DS100125B(06/12)

IXBF20N300

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 3000 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

2.5 5.0 V

I

CES

V

CE

= 0.8 • V

CES

, V

GE

= 0V 35 μA

Note 2, T

J

= 125°C 1.5 mA

I

GES

V

CE

= 0V, V

GE

= ± 20V ±100 nA

V

CE(sat)

I

C

= 20A, V

GE

= 15V, Note 1 2.7 3.2 V

T

J

= 125°C 3.2 V

V

CES

= 3000V

I

C110

= 14A

V

CE(sat)

≤ ≤

≤ 3.2V

High Voltage, High Gain

BIMOSFET

TM

Monolithic

Bipolar MOS Transistor

(Electrically Isolated Tab)

1 = Gate 5 = Collector

2 = Emitter

ISOPLUS i4-Pak

TM

Isolated Tab

1

5

2

Features

z

Silicon Chip on Direct-Copper Bond

(DCB) Substrate

z

Isolated Mounting Surface

z

4000V~ Electrical Isolation

z

High Blocking Voltage

z

High Peak Current Capability

z

Low Saturation Voltage

Advantages

z

Low Gate Drive Requirement

z

High Power Density

Applications

z

Switch-Mode and Resonant-Mode

Power Supplies

z

Uninterruptible Power Supplies (UPS)

z

Laser Generators

z

Capacitor Discharge Circuits

z

AC Switches

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXBF20N300

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fS

I

C

= 20A, V

CE

= 10V, Note 1 11 18 S

C

ies

2230 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 92 pF

C

res

33 pF

Q

g

105 nC

Q

ge

I

C

= 20A, V

GE

= 15V, V

CE

= 1000V 13 nC

Q

gc

45 nC

t

d(on)

64 ns

t

r

210 ns

t

d(off)

300 ns

t

f

504 ns

t

d(on)

68 ns

t

r

540 ns

t

d(off)

300 ns

t

f

395 ns

R

thJC

0.83 °C/W

R

thCS

0.15 °C/W

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Resistive Switching Times, T

J

= 125°C

I

C

= 20A, V

GE

= 15V

V

CE

= 1250V, R

G

= 10Ω

Resistive Switching Times, T

J

= 25°C

I

C

= 20A, V

GE

= 15V

V

CE

= 1250V, R

G

= 10Ω

ISOPLUS i4-Pak

TM

(HV) Outline

Pin 1 = Gate

Pin2 = Emitter

Pin 3 = Collector

Tab 4 = Isolated

Reverse Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

V

F

I

F

= 20A, V

GE

= 0V 2.1 V

t

rr

1.35 μs

I

RM

30 A

I

F

= 10A, V

GE

= 0V, -di

F

/dt = 100A/μs

V

R

= 100V, V

GE

= 0V

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Device must be heatsunk for high temperature leakage current

measurements to avoid thermal runaway.

IXBF20N300

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

5

10

15

20

25

30

35

40

00.511.5 22.5 33.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 2 4 6 8 101214161820

V

CE

- Volts

I

C

-

Amperes

V

GE

= 25V

20V

10V

15V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

5

10

15

20

25

30

35

40

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 25V

20V

15V

10V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 40A

I

C

= 20A

I

C

= 10A

Fig. 5. Collector-to-Emitter Voltage

vs. Gate-to-Emitter Voltage

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

5 7 9 1113151719212325

V

GE

- Volts

V

CE

- Volts

I

C

= 40A

T

J

= 25ºC

10A

20A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

40

45

50

3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5

V

GE

- Volts

I

C

-

Amperes

T

J

= 125ºC

25ºC

- 40ºC

IXBF20N300

IXBF20N300

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