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IXBF20N300

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXBF20N300
Fig. 7. Transconductance
0
4
8
12
16
20
24
28
0 5 10 15 20 25 30 35 40 45 50 55
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 102030405060708090100110
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 1kV
I
C
= 20A
I
G
= 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0
10
20
30
40
50
60
00.511.522.53
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 11. Reverse-Bias Safe Operating Area
0
20
40
60
80
100
120
140
250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 20Ω
dv / dt < 10V / ns
Fig. 12. Maximum Transient Thermal Impedance
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z
(th)JC
- ºC / W
D = tp / T
tp
T
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
© 2012 IXYS CORPORATION, All Rights Reserved
IXBF20N300
IXYS REF: B_20N300(5P)6-05-12-B
Fig. 14. Resistive Turn-on Rise Time vs.
Collector Current
0
100
200
300
400
500
600
700
10 15 20 25 30 35 40
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
450
500
550
600
650
700
750
800
850
10 20 30 40 50 60 70 80
R
G
- Ohms
t
r
- Nanoseconds
40
60
80
100
120
140
160
180
200
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 20A, 40A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
100
200
300
400
500
600
700
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
230
250
270
290
310
330
350
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 1250V
I
C
= 40A
I
C
= 20A
Fig. 17. Resistive Turn-off Switching Times vs.
Collector Current
0
200
400
600
800
1000
1200
10 15 20 25 30 35 40
I
C
- Amperes
t
f
- Nanoseconds
220
260
300
340
380
420
460
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 1250V
T
J
= 125ºC, 25ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
0
100
200
300
400
500
600
700
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 1250V
I
C
= 20A
I
C
= 40A
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
200
250
300
350
400
450
500
550
600
10 20 30 40 50 60 70 80
R
G
- Ohms
t
f
- Nanoseconds
0
200
400
600
800
1000
1200
1400
1600
t
d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 1250V
I
C
= 20A
I
C
= 40A
P1-P3P4-P5

IXBF20N300

Mfr. #:
Buy IXBF20N300
Manufacturer:
Littelfuse
Description:
IGBT Transistors DISC IGBT BIMSFT-VERYHIVOLT
Lifecycle:
New from this manufacturer.
Delivery:
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