LT5575
7
5575f
RF INPUT POWER (dBm)
–30
10
DSB NF (dB)
12
16
18
20
30
24
–20 –10 –5
14
26
28
22
–25 –15 0 5 10
5575 G21
NOTE 7
2500MHz
900MHz
1900MHz
I/Q Gain Mismatch
vs LO Input Power
I/Q Phase Mismatch
vs LO Input Power
Large-Signal DSB NF
vs RF Input Power
RF Port Return Loss LO Port Return Loss
Conversion Gain, IIP3, NF
vs Supply Voltage
IIP2 vs Supply Voltage
I/Q Gain Mismatch
vs Supply Voltage
I/Q Phase Mismatch
vs Supply Voltage
TYPICAL AC PERFORMANCE CHARACTERISTICS
V
CC
= 5V, EN = High, T
A
= 25ºC, P
RF
= –10dBm
(–10dBm/tone for 2-tone IIP2 and IIP3 tests), f
BB
= 1MHz (0.9MHz and 1.1MHz for 2-tone tests), P
LO
= 0dBm, unless otherwise noted.
Test Circuit Shown in Figure 1 (Notes 6, 7).
LO INPUT POWER (dBm)
–15
0.3
GAIN MISMATCH (dB)
0.2
0.1
0.0
0.1
0.2
0.3
–10 5 0 5
5575 G19
f
BB
= 1MHz
2500MHz
1900MHz
900MHz
LO INPUT POWER (dBm)
–15
–3
PHASE MISMATCH (DEG)
–2
–1
0
1
2
3
–10 5 0 5
5575 G20
f
BB
= 1MHz
900MHz
1900MHz
2500MHz
–30
–25
–20
–15
–10
–5
0
800
1100
1400 1700 2000 2300 2600
FREQUENCY (MHz)
RETURN LOSS (dB)
5575 G22
LOW BAND;
C10 = 4.7pF
MID BAND;
C10 = 2pF
HIGH BAND;
NO EXTERNAL
COMPONENT
800
1100
1400 1700 2000 2300 2600
FREQUENCY (MHz)
–25
RETURN LOSS (dB)
–20
–15
–10
–5
0
5575 G23
LOW BAND; C12 = 3.9pF
MID BAND; C12 = 2.2pF
HIGH BAND;
NO EXTERNAL COMPONENT
RF FREQUENCY (MHz)
GAIN (dB), NF (dB), IIP3 (dBm)
15
20
25
5575 G24
10
5
0
35
30
4.75V
5V
5.25V
DSB NF
CONV. GAIN
IIP3
800
1100
1400 1700 2000 2300 2600
800
1100
1400 1700 2000 2300 2600
RF FREQUENCY (MHz)
IIP2 (dBm)
50
55
60
5575 G25
45
40
70
65
4.75V
5V
5.25V
800
1100
1400 1700 2000 2300 2600
RF FREQUENCY (MHz)
GAIN MISMATCH (dB)
0.1
0.0
0.1
5575 G26
0.2
0.3
0.3
0.2
4.75V
5V
5.25V
RF FREQUENCY (MHz)
PHASE MISMATCH (DEG)
–1
0
1
5575 G27
–2
–3
3
2
4.75V
5V
5.25V
800
1100
1400 1700 2000 2300 2600
LT5575
8
5575f
DC OFFSET (mV)
DISTRIBUTION (%)
5575 G34
15
20
40
30
25
35
10
5
0
6420–2–4–6–8–10
–40°C
25°C
85°C
0
5
15
20
25
50
35
10
40
45
30
CONVERSION GAIN (dB)
DISTRIBUTION (%)
5575 G28
4.44.34.24.143.93.8
T
A
= 25°C
IIP3 (dBm)
21.4
DISTRIBUTION (%)
24.6
5575 G29
15
20
30
25
10
5
0
21.8 22.2 22.6
23
23.4
23.8 24.2
25
–40°C
25°C
85°C
DSB NOISE FIGURE (dB)
DISTRIBUTION (%)
5575 G30
15
20
35
30
25
10
5
0
1312.912.812.712.612.512.412.312.212.1
T
A
= 25°C
30
40
60
20
10
0
50
AMPLITUDE MISMATCH (mdB)
DISTRIBUTION (%)
60
5575 G31
–20 0
20 40 80
–40°C
25°C
85°C
PHASE MISMATCH (°)
–1.2
DISTRIBUTION (%)
15
20
25
2.0
5575 G32
10
5
0
0.8 –0.4
0
0.4 0.8
1.2 1.6 2.2
–40°C
25°C
85°C
20
25
30
15
10
0
5
40
35
DC OFFSET (mV)
DISTRIBUTION (%)
5575 G33
8
10 12
14
24
61618
–40°C
25°C
85°C
TYPICAL AC PERFORMANCE CHARACTERISTICS
V
CC
= 5V, EN = High, T
A
= 25ºC, P
RF
= –10dBm
(–10dBm/tone for 2-tone IIP2 and IIP3 tests), f
BB
= 1MHz (0.9MHz and 1.1MHz for 2-tone tests), P
LO
= 0dBm, unless otherwise noted.
Test Circuit Shown in Figure 1 (Note 6).
Conversion Gain Distribution
at 1900MHz
IIP3 Distribution at 1900MHz
vs Temperature
Noise Figure Distribution
at 1900MHz
I/Q Amplitude Mismatch Distribution
at 1900MHz vs Temperature
I/Q Phase Mismatch Distribution
at 1900MHz vs Temperature
I-Output DC Offset Voltage
Distribution vs Temperature
Q-Output DC Offset Voltage
Distribution vs Temperature
LT5575
9
5575f
BLOCK DIAGRAM
PIN FUNCTIONS
GND (Pins 1, 3, 4, 9, 11): Ground pin.
RF
(Pin 2): RF Input Pin. This is a single-ended 50Ω ter-
minated input. No external matching network is required
for the high frequency band. An external series capacitor
(and/or shunt capacitor) may be required for impedance
transformation to 50Ω in the low frequency band from
800MHz to 1.5GHz (see Figure 4). If the RF source is not
DC blocked, a series blocking capacitor should be used.
Otherwise, damage to the IC may result.
V
CC
(Pins 6, 7, 8, 12): Power Supply Pins. These pins
should be decoupled using 1000pF and 0.1µF capacitors.
EN (Pin 5): Enable Pin. When the input voltage is higher
than 2.0V, the circuit is completely turned on. When the
enable pin voltage is less than 1.0V, the circuit is turned
off. Under no conditions should the voltage at the EN
pin exceed V
CC
+ 0.3V. Otherwise, damage to the IC may
result. If the Enable function is not needed, then the EN
pin should be tied to V
CC
.
LO
(Pin 10): Local Oscillator Input Pin. This is a single-
ended 50Ω terminated input. No external matching net-
work is required in the high frequency band. An external
shunt capacitor (and/or series capacitor) may be required
for impedance transformation to 50Ω for the low frequency
band from 800MHz to 1.5GHz (see Figure 6). If the LO
source is not DC blocked, a series blocking capacitor must
be used. Otherwise, damage to the IC may result.
Q
OUT
, Q
OUT
+
(Pins 13, 14): Differential Baseband
Output Pins of the Q Channel. The internal DC bias voltage
is V
CC
– 1.1V for each pin.
I
OUT
, I
OUT
+
(Pins 15, 16): Differential Baseband
Output Pins of the I Channel. The internal DC bias voltage
is V
CC
– 1.1V for each pin.
Exposed Pad (Pin 17): Ground Return for the Entire IC.
This pin must be soldered to the printed circuit board
ground plane.
RF
I
OUT
+
LO
GND
0°/90°
16
I
OUT
15
Q
OUT
+
14
Q
OUT
13
LO BUFFERS
LPF
I-MIXER
LPF
Q-MIXER
EXPOSED
PAD
6
V
CC
BIAS
5
EN
1
GND
7
V
CC
8
4
V
CC
12
V
CC
GND
5575 BD
9 17
RF AMP
RF AMP
2
3
11
10

LT5575EUF#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Modulator / Demodulator 800 MHz to 2.7GHz Direct I/Q Demodulator
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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