2
Table 1. Absolute Maximum Rating
[1]
Symbol Parameter Units
Absolute
Max.
Max.
Recommended
Vd Device Voltage V 5.5 4.2
Vref Max Input to Ground DC Voltage V +0.3
-5.5
+0.1
-4.2
Ids Drain Current mA 70 60
P
d
Power Dissipation mW 300 250
P
in,max
CW RF Input Power dBm +20 +13
T
j
Junction Temperature °C 170 150
T
STG
Storage Temperature °C -65 to +150 -40 to +85
Thermal Resistance
[2]
: Tjc = 82 °C / W
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Thermal Resistance is measured from junction to board using IR method.
Table 2. Electrical Specifications
T
A
= 25 °C , Freq = 0.6 GHz, Vd = 3V (unless otherwise specified)
Symbol Parameter and Test Condition Units Min. Typ Max.
Vref
[1,2]
Input to Ground DC Voltage Vd = 3V Id = 10 mA V -0.80 -0.61 -0.42
NF
[1,2]
Noise Figure in test circuit Vd = 3V Id = 10 mA dB - 1.50 1.90
Gain
[1,2]
Associated Gain in test circuit Vd = 3V Id = 10 mA dB 14.00 15.40 17.00
IIP3
[1,2,3]
Input 3rd Order Intercept in test
circuit
Vd = 3V Id = 10 mA dBm -0.50 1.10 -
P1dB
[1,2]
Output Power at 1 dB Gain
Compression in test circuit
Vd = 3V Id = 10 mA dBm - 3.20 -
Ig (Bypass)
[1,2]
Gate Leakage Current
(Bypass mode)
Vd = 0,
Vref = -3V
Id = 0 mA uA - 1.70 -
IIP3 (Bypass)
[1,2,4]
Input 3rd Order Intercept in test
circuit (bypass mode)
Vd = 0,
Vref = -3V
Id = 0 mA dBm 26.50 29.50 -
IL (Bypass)
[1,2]
Insertion Loss in test circuit
(bypass mode)
Vd = 0,
Vref = -3V
Id = 0 mA dB -4.00 -2.60 -
Notes:
1. Circuit losses have been de-embedded from actual measurement.
2. Measurement in table 2 uses the test board and circuit schematic shows in figure 1a. Data based on 500 part sample size from two wafer lots
during initial characterization of this product.
3. 0.6 GHz IIP3 Test Condition : F1 = 0.6 GHz, F2 = 0.605 GHz, Pin = -25 dBm
4. 0.6 GHz IIP3 (Bypass) Test Condition : F1 = 0.6 GHz, F2 = 0.605 GHz, Pin = -15 dBm
