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IRFH7936TRPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
Notes through are on page 9
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
Benefits
l Very low R
DS(ON)
at 4.5V V
GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for R
G
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
V
DSS
R
DS(on)
max
Qg
30V
4.8m
Ω
@V
GS
= 10V
17nC
Absolute Maximum Ratin
g
s
Parameter Units
V
DS
Drain-to-Source Voltage
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Deratin
g
Factor
W/°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case
––– 5.6
R
θJA
Junction-to-Ambient
––– 40
°C/W
°C
W
A
V
Max.
20
54
160
± 20
30
16
-55 to + 150
3.1
0.025
2.0
IRFH7936PbF
PQFN 5X6 mm
1
www.irf.com © 2013 International Rectifier August 16, 2013
IRFH7936PbF
www.irf.com © 2013 International Rectifier August 16, 2013
2
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
y
p. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 4.1 4.8
––– 6.0 6.8
V
GS(th)
Gate Threshold Voltage 1.35 1.8 2.35 V
∆V
GS(th)
Gate Threshold Voltage Coefficient ––– -6.3 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 48 ––– ––– S
Q
g
Total Gate Charge ––– 17 26
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 4.5 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 2.0 –––
Q
gd
Gate-to-Drain Charge ––– 5.5 –––
Q
godr
Gate Charge Overdrive ––– 5.0 ––– See Fig.17 & 18
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 7.5 –––
Q
oss
Output Charge ––– 9.0 ––– nC
R
G
Gate Resistance ––– 1.5 2.3
Ω
t
d(on)
Turn-On Delay Time ––– 17 –––
t
r
Rise Time ––– 12 –––
t
d(off)
Turn-Off Delay Time ––– 19 –––
t
f
Fall Time ––– 7.0 –––
C
iss
Input Capacitance ––– 2360 –––
C
oss
Output Capacitance ––– 450 –––
C
rss
Reverse Transfer Capacitance ––– 210 –––
Avalanche Characteristics
Parameter Units
E
AS
Sin
g
le Pulse Avalanche Ener
gy
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter Min. T
y
p. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.0 V
t
rr
Reverse Recovery Time ––– 14 21 ns
Q
rr
Reverse Recovery Charge ––– 15 23 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
I
D
= 16A
V
GS
= 0V
V
DS
= 15V
16
ƒ = 1.0MHz
V
GS
= 4.5V, I
D
= 16A
V
GS
= 4.5V
Typ.
–––
R
G
=1.8Ω
V
DS
= 15V, I
D
= 16A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
mΩ
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
T
J
= 25°C, I
F
= 16A, V
DD
= 15V
di/dt = 300A/µs
See Fig.16
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 16A
See Fig.15
Max.
28
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 20A
–––
–––
–––
–––
A
3.9
160
V
DS
= V
GS
, I
D
= 50µA
ns
pF
nC
nA
µA
Conditions
IRFH7936PbF
www.irf.com © 2013 International Rectifier August 16, 2013
3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
BOTTOM 2.7V
≤
60µs PULSE WIDTH
Tj = 25°C
2.7V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.7V
≤
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
BOTTOM 2.7V
1 2 3 4 5
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
DS
= 15V
≤
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 20A
V
GS
= 10V
P1-P3P4-P6P7-P9

IRFH7936TRPBF

Mfr. #:
Buy IRFH7936TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC
Lifecycle:
New from this manufacturer.
Delivery:
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