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IRFH7936TRPBF

P1-P3P4-P6P7-P9
IRFH7936PbF
www.irf.com © 2013 International Rectifier August 16, 2013
4
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0 5 10 15 20 25 30 35 40 45
Q
G
,
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 16A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
T
A
= 25°C
Tj = 150°C
Single Pulse
100µsec
1msec
10msec
DC
IRFH7936PbF
www.irf.com © 2013 International Rectifier August 16, 2013
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0
5
10
15
20
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 50µA
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
Ri (°C/W) τi (sec)
1.6431 0.000308
4.6179 0.017766
16.903 0.9436
16.855 40.8
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= τi/Ri
Ci= τi/Ri
τ
A
τ
A
τ
4
τ
4
R
4
R
4
IRFH7936PbF
www.irf.com © 2013 International Rectifier August 16, 2013
6
Fig 13. Maximum Avalanche Energy
vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
15V
20V
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
0 2 4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
2
4
6
8
10
12
14
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 20A
T
J
= 25°C
T
J
= 125°C
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
20
40
60
80
100
120
140
160
180
200
220
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 3.0A
5.1A
BOTTOM 16A
P1-P3P4-P6P7-P9

IRFH7936TRPBF

Mfr. #:
Buy IRFH7936TRPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 4.8mOhms 17nC
Lifecycle:
New from this manufacturer.
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