APT25GR120SD15 Datasheet APT25GR120SD15, APT25GR120BD15 | P1-P3

052-6409 Rev A 1-2013

APT25GR120B_SD15

Symbol Parameter Ratings Unit

V

ces

Collector Emitter Voltage 1200

V

GE

Gate-Emitter Voltage ±30

I

C1

Continuous Collector Current

@ T

C

= 25°C 75

AI

C2

Continuous Collector Current @ T

C

= 125°C 25

I

CM

Pulsed Collector Current

1

100

SCWT Short Circuit Withstand Time: V

CE

= 600V, V

GE

= 15V, T

C

=125°C 10 s

P

D

Total Power Dissipation @ T

C

= 25°C 521 W

T

J

,T

STG

Operating and Storage Junction Temperature Range -55 to 150

°C

T

L

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

MAXIMUM RATINGS All Ratings: T

C

= 25°C unless otherwise speciﬁ ed.

STATIC ELECTRICAL CHARACTERISTICS

Microsemi Website - http://www.microsemi.com

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Symbol Parameter Min Typ Max Unit

V

(BR)CES

Collector-Emitter Breakdown Voltage (V

GE

= 0V, I

C

= 600A) 1200

Volts

V

GE(TH)

Gate Threshold Voltage (V

CE

= V

GE

, I

C

= 1.0mA, T

j

= 25°C) 3.5 5.0 6.5

V

CE(ON)

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 25A, T

j

= 25°C) 2.5 3.2

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 25A, T

j

= 125°C) 3.3

Collector-Emitter On Voltage (V

GE

= 15V, I

C

= 50A, T

j

= 25°C) 3.5

I

CES

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 25°C)

2

10 600

A

Collector Cut-off Current (V

CE

= 1200V, V

GE

= 0V, T

j

= 125°C)

2

100

I

GES

Gate-Emitter Leakage Current (V

GE

= ±20V) ±250 nA

Ultra Fast NPT - IGBT

®

The Ultra Fast NPT - IGBT

®

family of products is the newest generation of planar

IGBTs optimized for outstanding ruggedness and the best trade-off between

conduction and switching losses.

Features

• Low Saturation Voltage

• Low Tail Current

• RoHS Compliant

• Short Circuit Withstand Rated

• High Frequency Switching

• Ultra Low Leakage Current

Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for

applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power

supplies (UPS).

APT25GR120BD15

APT25GR120SD15

1200V, 25A, V

ce(on)

= 2.5V Typical

T

O

-

2

4

7

G

C

E

D

3

PA K

G

C

E

(S)

(B)

Combi (IGBT and Diode)

APT25GR120B_SD15

052-6409 Rev A 1-2013

THERMAL AND MECHANICAL CHARACTERISTICS

DYNAMIC CHARACTERISTICS

1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.

2 Pulse test: Pulse Width < 380μs, duty cycle < 2%.

3 See Mil-Std-750 Method 3471.

4 R

G

is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)

5 E

on2

is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the

clamping diode.

6 E

off

is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.

Microsemi reserves the right to change, without notice, the speciﬁ cations and information contained herein.

Symbol Parameter Test Conditions Min Typ Max Unit

C

ies

Input Capacitance Capacitance

V

GE

= 0V, V

CE

= 25V

f = 1MHz

2784

pF

C

oes

Output Capacitance 271

C

res

Reverse Transfer Capacitance 75

V

GEP

Gate to Emitter Plateau Voltage

Gate Charge

V

GE

= 15V

V

CE

= 600V

I

C

= 25A

7.5 V

Q

g

3

Total Gate Charge 154

203

nC

Q

ge

Gate-Emitter Charge 20 27

Q

gc

Gate- Collector Charge 76 97

t

d(on)

Turn-On Delay Time

Inductive Switching (25°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 25A

R

G

= 4.3 

4

T

J

= +25°C

16

ns

t

r

Current Rise Time

10

t

d(off)

Turn-Off Delay Time 122

t

f

Current Fall Time 20

E

on2

5

Turn-On Switching Energy 742 1110

J

E

off

6

Turn-Off Switching Energy

427 640

t

d(on)

Turn-On Delay Time Inductive Switching (125°C)

V

CC

= 600V

V

GE

= 15V

I

C

= 25A

R

G

= 4.3 

4

T

J

= +125°C

16

ns

t

r

Current Rise Time 10

t

d(off)

Turn-Off Delay Time 136

t

f

Current Fall Time 28

E

on2

5

Turn-On Switching Energy 1297 1945

J

E

off

6

Turn-Off Switching Energy

480 720

0

0.05

0.10

0.15

0.20

0.25

10

-4

10

-3

10

-2

0.1 1

10

-5

Z



JC

, THERMAL IMPEDANCE (°C/W)

0.3

D = 0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.5

0.1

0.05

Peak T

J

= P

DM

x Z

θJC

+T

C

Duty Factor D =

t

1

/

t

2

t

2

t

1

P

DM

Note:

Symbol Characteristic Min Typ Max Unit

R

JC

Junction to Case Thermal Resistance (IGBT) .24

°C/W

Junction to Case Thermal Resistance (Diode) 1.18

R

JA

Junction to Ambient Thermal Resistance 40

W

T

Package Weight

.22 oz

6.2 g

Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw

10 in-lbf

6.2 Nm

052-6409 Rev A 1-2013

APT25GR120B_SD15

TYPICAL PERFORMANCE CURVES

0

10

20

30

40

50

60

70

80

90

100

-50 -25 0 25 50 75 100 125 150

0

1

2

3

4

5

6

-50 0 50 100 150

0

1

2

3

4

5

6

6 8 10 12 14 16

0

40

80

120

160

200

0 2 4 6 8 10 12

0

20

40

60

80

100

120

140

160

180

0 4 8 12 16 20 24 28 32

0

50

100

150

200

0 2 4 6 8 10 12

250s PULSE

TEST<0.5 % DUTY

CYCLE

T

J

= 25°C.

250s PULSE TEST

<0.5 % DUTY CYCLE

V

GE

= 15V.

250s PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 12.5A

I

C

= 25A

I

C

= 50A

I

C

= 25A

I

C

= 50A

13V

15V

T

J

= 25°C

T

J

= -55°C

V

GE

= 15V

T

J

= - 55°C

T

J

= 150°C

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 3, Saturation Voltage Characteristics (T

J

= 25°C)

I

C

, COLLECTOR CURRENT (A)

T

J

= 25°C

T

J

= 125°C

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 4, Output Characteristics (T

J

= 25°C)

I

C

, COLLECTOR CURRENT (A)

T

J

= 125°C

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 6, Transfer Characteristics

I

C

, COLLECTOR CURRENT (A)

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 7, On State Voltage vs Gate-to-Emitter Voltage

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Junction Temperature

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

T

C

, Case Temperature (°C)

FIGURE 9, DC Collector Current vs Case Temperature

I

C

, DC COLLECTOR CURRENT (A)

0.85

0.90

0.95

1.00

1.05

1.10

1.15

-50 -25 0 25 50 75 100 125

T

J

, JUNCTION TEMPERATURE

FIGURE 8, Breakdown Voltage vs Junction Temperature

BV

CES

, BREAKDOWN VOLTAGE

6.5V

7V

I

C

= 12.5A

8.0V

8.5V

7.5V

9V

I

C

(A)

FIGURE 2, Max Frequency vs Current (T

case

= 75°C)

T

J

= 150°C

0

50

100

150

200

250

300

350

0 10 20 30 40 50

FREQUENCY (kHz)

APT25GR120SD15

APT25GR120SD15

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