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APT25GR120SD15

P1-P3P4-P6P7-P8
APT25GR120B_SD15
052-6409 Rev A 1-2013
TYPICAL PERFORMANCE CURVES
0
2
4
6
8
10
12
14
16
18
20
0 50 100 150 200
I
C
= 25A
T
J
= 25°C
V
CE
= 960V
V
CE
= 600V
V
CE
= 240V
GATE CHARGE (nC)
FIGURE 11, Gate charge
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
1
10
100
0 10 20 30 40 50
10
100
1000
10 20 30 40 50
100
1000
1400
0 25 50 75 100 125
100
1000
3000
0 10 20 30 40 50
100
1000
10000
10 20 30 40 50
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C or 125°C
T
d(on)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Turn-On Time vs Collector Current
SWITCHING TIME (ns)
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-Off Time vs Collector Current
SWITCHING TIME (ns)
R
G
, GATE RESISTANCE ()
FIGURE 15, Energy Loss vs Gate Resistance
I
CE
, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Energy Loss vs Collector Current
SWITCHING ENERGY LOSS (J)
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy vs Junction Temperature
SWITCHING ENERGY LOSSES (J)
T
r
T
d(off)
T
f
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C
T
J
= 125°C
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
T
J
= 25°C
T
J
= 125°C
E
on2
E
off
E
on2
E
off
SWITCHING ENERGY LOSS (J)
E
off
E
on2
V
CE
= 600V, V
GE
=15V, R
G
= 4.3
I
C
= 25A
1.0E11
1.0E10
1.0E9
1.0E8
0 10 20 30 40 50
C
oes
C
res
C
ies
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 10, Capacitance vs Collector-To-Emitter Voltage
C, CAPACITANCE (F)
1
10
100
200
1 10 100 1000 3000
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 17, Minimum Switching Safe Operating Area
I
C
, COLLECTOR CURRENT (A)
100s
10ms
.1ms
100ms
V
CE
= 600V, V
GE
=15V, I
C
= 25A
T
J
= 125°C
1ms
052-6409 Rev A 1-2013
APT25GR120B_SD15
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
MAXIMUM RATINGS All Ratings: T
C
= 25°C unless otherwise specifi ed.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Symbol Characteristic / Test Conditions APT25GR120B_SD15 Unit
I
F(AV)
Maximum Average Forward Current (T
C
= 126°C, Duty Cycle = 0.5)
15
Amps
I
F(RMS)
RMS Forward Current (Square wave, 50% duty) 29
I
FSM
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3 ms)
110
Symbol Characteristic / Test Conditions Min Type Max Unit
V
F
Forward Voltage
I
F
= 15A
2.8
Volts
I
F
= 30A
3.4
I
F
= 15A, T
J
= 125°C
2.45
Symbol Characteristic Test Conditions Min Typ Max Unit
t
rr
Reverse Recovery Time
I
F
= 1A, di
F
/dt = -100A/s ,
V
R
= 30V, T
J
= 25°C
-
21
-
ns
t
rr
Reverse Recovery Time
I
F
= 15A, di
F
/dt = -200A/s
V
R
= 800V, T
C
= 25°C
-
240
-
Q
rr
Reverse Recovery Charge -
260
- nC
I
RRM
Maximum Reverse Recovery Current -
3
- Amps
t
rr
Reverse Recovery Time
I
F
= 15A, di
F
/dt = -200A/s
V
R
= 800V, T
C
= 125°C
-
290
-ns
Q
rr
Reverse Recovery Charge -
960
-
nC
I
RRM
Maximum Reverse Recovery Current -
6
-
Amps
t
rr
Reverse Recovery Time
I
F
= 15A, di
F
/dt = -1000A/s
V
R
= 800V, T
C
= 125°C
-
130
-
ns
Q
rr
Reverse Recovery Charge -
1340
-nC
I
RRM
Maximum Reverse Recovery Current -
19
- Amps
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
10
-5
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 18. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
1.20
1.00
0.80
0.60
0.40
0.20
0
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
D = 0.9
APT25GR120B_SD15
052-6409 Rev A 1-2013
400
350
300
250
200
150
100
50
0
25
20
15
10
5
0
Duty cycle = 0.5
T
J
= 175°C
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
35
30
25
20
15
10
5
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
0
C
J
, JUNCTION CAPACITANCE K
f
, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/s)
I
F(AV)
(A)
T
J
, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 23. Dynamic Parameters vs. Junction Temperature Figure 24. Maximum Average Forward Current vs. CaseTemperature
V
R
, REVERSE VOLTAGE (V)
Figure 25. Junction Capacitance vs. Reverse Voltage
Q
rr
, REVERSE RECOVERY CHARGE I
F
, FORWARD CURRENT
(nC) (A)
I
RRM
, REVERSE RECOVERY CURRENT t
rr
, REVERSE RECOVERY TIME
(A) (ns)
T
J
= 175°C
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
0 1 2 3 4 5 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
T
J
= 125°C
V
R
= 800V
7.5A
15A
30A
T
J
= 125°C
V
R
= 800V
30A
7.5A
15A
60
50
40
30
20
10
0
2500
2000
1500
1000
500
0
T
J
= 125°C
V
R
= 800V
30A
15A
7.5A
t
rr
Q
rr
Q
rr
t
rr
I
RRM
V
F
, ANODE-TO-CATHODE VOLTAGE (V) -di
F
/dt, CURRENT RATE OF CHANGE(A/s)
Figure 19. Forward Current vs. Forward Voltage Figure 20. Reverse Recovery Time vs. Current Rate of Change
-di
F
/dt, CURRENT RATE OF CHANGE (A/s) -di
F
/dt, CURRENT RATE OF CHANGE (A/s)
Figure 21. Reverse Recovery Charge vs. Current Rate of Change Figure 22. Reverse Recovery Current vs. Current Rate of ChangeTum testic
P1-P3P4-P6P7-P8

APT25GR120SD15

Mfr. #:
Buy APT25GR120SD15
Manufacturer:
Microchip / Microsemi
Description:
IGBT Transistors FG, IGBT-COMBI, 1200V, 25A, TO-268
Lifecycle:
New from this manufacturer.
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