Document Number: 001-69650 Rev. *D Page 4 of 15
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground
potential .......................................................–0.2 V to 2.45 V
DC voltage applied to outputs
in high Z State
[2, 3]
......................................–0.2 V to 2.45 V
DC input voltage
[2, 3]
...................................–0.2 V to 2.45 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, method 3015) ................................ > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[4]
CY62256EV18LL Industrial –40 °C to +85 °C 1.65 V to
2.25 V
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
70 ns
Unit
Min Typ
[5]
Max
V
OH
Output HIGH voltage I
OH
= –0.1 mA 1.4 – – V
V
OL
Output LOW voltage I
OL
= 0.1 mA – – 0.2 V
V
IH
Input HIGH voltage V
CC
= 1.65 V to 2.25 V 1.4 – V
CC
+ 0.2 V V
V
IL
Input LOW voltage V
CC
= 1.65 V to 2.25 V –0.2 – 0.4 V
I
IX
Input leakage current GND < V
I
< V
CC
–1 – +1 µA
I
OZ
Output leakage current GND < V
O
< V
CC
, output disabled –1 – +1 µA
I
CC
V
CC
operating supply current f = f
max
= 1/t
RC
V
CC
= 2.25 V
I
OUT
= 0 mA
CMOS levels
–1116mA
f = 1 MHz – 1.3 2.0 mA
I
SB1
Automatic CE power-down
current — CMOS inputs
CE > V
CC
0.2 V,
V
IN
> V
CC
– 0.2 V, V
IN
< 0.2 V
f = f
max
(address and data only),
f = 0 (OE
and WE), V
CC
= 2.25 V
–14µA
I
SB2
[6]
Automatic CE power-down
current — CMOS inputs
CE > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= 2.25 V
–14µA
Notes
2. V
IL(min)
= –2.0 V for pulse durations less than 20 ns.
3. V
IH(max)
= V
CC
+ 0.5 V for pulse durations less than 20 ns.
4. Full device AC operation assumes a 100
µs ramp time from 0 to V
CC(min)
and 200 µs wait time after V
CC
stabilization.
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
6. Chip enables (CE
) must be at CMOS level to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
