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MMBF4393LT3G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 10
1 Publication Order Number:
MMBF4391LT1/D
MMBF4391LT1G,
SMMBF4391LT1G,
MMBF4392LT1G,
MMBF4393LT1G
JFET Switching Transistors
N−Channel
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DS
30 Vdc
Drain−Gate Voltage V
DG
30 Vdc
Gate−Source Voltage V
GS
30 Vdc
Forward Gate Current I
G(f)
50 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SOT−23
CASE 318
STYLE 10
See detailed ordering, marking and shipping information in the
package dimensions section on page 2 of this data sheet.
MARKING & ORDERING INFORMATION
http://onsemi.com
2 SOURCE
3
GATE
1 DRAIN
XXX = Specific Device Code
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MARKING DIAGRAM
1
XXX M G
G
2
1
3
MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage
(I
G
= 1.0 mAdc, V
DS
= 0)
V
(BR)GSS
30 − Vdc
Gate Reverse Current
(V
GS
= 15 Vdc, V
DS
= 0, T
A
= 25°C)
(V
GS
= 15 Vdc, V
DS
= 0, T
A
= 100°C)
I
GSS
−
−
1.0
0.20
nAdc
mAdc
Gate−Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
V
GS(off)
−4.0
−2.0
−0.5
−10
−5.0
−3.0
Vdc
Off−State Drain Current
(V
DS
= 15 Vdc, V
GS
= −12 Vdc)
(V
DS
= 15 Vdc, V
GS
= −12 Vdc, T
A
= 100°C)
I
D(off)
−
−
1.0
1.0
nAdc
mAdc
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
I
DSS
50
25
5.0
150
75
30
mAdc
Drain−Source On−Voltage
(I
D
= 12 mAdc, V
GS
= 0)
MMBF4391LT1, SMMBF4391LT1
(I
D
= 6.0 mAdc, V
GS
= 0)
MMBF4392LT1
(I
D
= 3.0 mAdc, V
GS
= 0)
MMBF4393LT1
V
DS(on)
−
−
−
0.4
0.4
0.4
Vdc
Static Drain−Source On−Resistance
(I
D
= 1.0 mAdc, V
GS
= 0)
MMBF4391LT1, SMMBF4391LT1
MMBF4392LT1
MMBF4393LT1
r
DS(on)
−
−
−
30
60
100
W
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(V
DS
= 0 Vdc, V
GS
= −15 Vdc, f = 1.0 MHz)
C
iss
− 14
pF
Reverse Transfer Capacitance
(V
DS
= 0 Vdc, V
GS
= −12 Vdc, f = 1.0 MHz)
C
rss
− 3.5
pF
ORDERING INFORMATION
Device Marking Package Shipping
†
MMBF4391LT1G
6J
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SMMBF4391LT1G*
6J
SOT−23
(Pb−Free)
MMBF4392LT1G
6K
SOT−23
(Pb−Free)
MMBF4393LT1G
M6G
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
MMBF4391LT1G, SMMBF4391LT1G, MMBF4392LT1G, MMBF4393LT1G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
T
J
= 25°C
I
D
, DRAIN CURRENT (mA)
, TURN-ON DELAY TIME (ns)
d(on)
t
5.0
2.0
20
10
0.5 1.0 3.0 7.05.0
1.0
50
100
0.7 2.0 10 20
I
D
, DRAIN CURRENT (mA)
, RISE TIME (ns)
r
t
Figure 1. Turn−On Delay Time
Figure 2. Rise Time
R
K
= R
D'
R
K
= 0
R
K
= R
D'
R
K
= 0
I
D
, DRAIN CURRENT (mA)
, TURN-OFF DELAY TIME (ns)
d(off)
t
Figure 3. Turn−Off Delay Time
R
K
= R
D'
R
K
= 0
I
D
, DRAIN CURRENT (mA)
Figure 4. Fall Time
R
K
= R
D'
R
K
= 0
, FALL TIME (ns)
f
t
MMBF4391
MMBF4392
MMBF4393
30 50
200
500
1000
0.5 1.0 3.0 7.05.00.7 2.0 10 20 30 50
5.0
2.0
20
10
1.0
50
100
200
500
1000
0.5 1.0 3.0 7.0
5.0
0.7 2.0 10 20 30 500.5 1.0 3.0 7.0
5.0
0.7 2.0 10 20 30 50
5.0
2.0
20
10
1.0
50
100
200
500
1000
5.0
2.0
20
10
1.0
50
100
200
500
1000
T
J
= 25°C
MMBF4391
MMBF4392
MMBF4393
T
J
= 25°C
MMBF4391
MMBF4392
MMBF4393
T
J
= 25°C
MMBF4391
MMBF4392
MMBF4393
V
GS(off)
= 12 V
= 7.0 V
= 5.0 V
V
GS(off)
= 12 V
= 7.0 V
= 5.0 V
V
GS(off)
= 12 V
= 7.0 V
= 5.0 V
V
GS(off)
= 12 V
= 7.0 V
= 5.0 V
P1-P3P4-P6

MMBF4393LT3G

Mfr. #:
Buy MMBF4393LT3G
Manufacturer:
ON Semiconductor
Description:
JFET SS JFET NCH 30V TR
Lifecycle:
New from this manufacturer.
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