ZXMN2A04DN8
ISSUE 1 - JULY 2004
SEMICONDUCTORS
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
(a) (d)
R
⍜JA
100 °C/W
Junction to Ambient
(b) (e)
R
⍜JA
70 °C/W
Junction to Ambient
(b) (d)
R
⍜JA
60 °C/W
THERMAL RESISTANCE
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
20 V
Gate Source Voltage V
GS
⫾12
V
Continuous Drain Current (V
GS
=10V; T
A
=25°C)
(b) (d)
(V
GS
=10V; T
A
=70°C)
(b) (d)
(V
GS
=10V; T
A
=25°C)
(a) (d)
I
D
7.7
6.2
5.9
A
A
A
Pulsed Drain Current
(c)
I
DM
38 A
Continuous Source Current (Body Diode)
(b)
I
S
2.9 A
Pulsed Source Current (Body Diode)
(c)
I
SM
38 A
Power Dissipation at T
A
=25°C
(a) (d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at T
A
=25°C
(a) (e)
Linear Derating Factor
P
D
1.8
14
W
mW/°C
Power Dissipation at T
A
=25°C
(b) (d)
Linear Derating Factor
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
