ZXMN2A04DN8
ISSUE 1 - JULY 2004
4
SEMICONDUCTORS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
20
VI
D
=250A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
0.5
AV
DS
=20V, V
GS
=0V
Gate-Body Leakage I
GSS
100
nA V
GS
=⫾12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.7
VI
D
=250A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.025
0.035
Ω
⍀
V
GS
=4.5V, I
D
=5.9A
V
GS
=2.5V, I
D
=5A
Forward Transconductance
(3)
g
fs
40
SV
DS
=10V,I
D
=5.9A
DYNAMIC
(3)
Input Capacitance C
iss
1880
pF
V
DS
=10V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
506
pF
Reverse Transfer Capacitance C
rss
386
pF
SWITCHING
(2) (3)
Turn-On Delay Time t
d(on)
7.9
ns
V
DD
=10V, I
D
=1A
R
G
≅6⍀,V
GS
=5V
Rise Time t
r
14.8
ns
Turn-Off Delay Time t
d(off)
50.5
ns
Fall Time t
f
30.6
ns
Gate Charge Q
g
22.1
nC V
DS
=15V,V
GS
=5V,
I
D
=3.5A
Total Gate Charge Q
g
40.5
nC
V
DS
=10V,V
GS
=4.5V,
I
D
=5.9A
Gate-Source Charge Q
gs
5.6
nC
Gate-Drain Charge Q
gd
8.0
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85 0.95
VT
J
=25°C, I
S
=5.1A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
18.0
ns T
J
=25°C, I
F
=1.9A,
di/dt= 100A/µs
Reverse Recovery Charge
(3)
Q
rr
8.9
nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Width=300s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
