MT5HTF3272KY-667B2

PDF: 09005aef818e3e75/Source: 09005aef818e3df5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
htf5c32x72k.fm - Rev. B 2/07 EN
10 ©2005 Micron Technology, Inc. All rights reserved.
256MB: (x72, SR) 244-Pin DDR2 Mini-RDIMM
Register and PLL Specifications
Register and PLL Specifications
Notes: 1. Timing and switching specifications for the register listed above are critical for proper oper-
ation of the DDR2 SDRAM registered DIMMs. These are meant to be a subset of the param-
eters for the specific device used on the module. Detailed information for this register is
available in JEDEC standard JESD82.
Table 9: Register Specifications
SSTU32866 devices or equivalent JESD82-10
Parameter Symbol Pins Condition Min Max Units
DC high-level
input voltage
V
IH(DC) Address,
control,
command
SSTL_18 VREF(DC) + 125 VDDQ + 250 mV
DC low-level
input voltage
V
IL(DC) Address,
control,
command
SSTL_18 0 VREF(DC) - 125 mV
AC high-level
input voltage
V
IH(AC) Address,
control,
command
SSTL_18 VREF(DC) + 250 VDD mV
AC low-level
input voltage
V
IL(AC) Address,
control,
command
SSTL_18 0 VREF(DC) - 250 mV
Output high voltage
V
OH Parity output LVCMOS 1.2 V
Output low voltage
V
OL Parity output LVCMOS 0.5 V
Input current
I
I All pins VI = VDDQ or VSSQ–5 5µA
Static standby
I
DD All pins RESET# = VSSQ (Io = 0) 100 µA
Static operating
I
DD All pins RESET# = VSSQ;
VI = VIH(AC) or VIL(DC)
Io = 0
–40mA
Dynamic operating
(clock tree)
I
DDD n/a RESET# = VDD, VI = VIH(AC) or
VIL(AC), Io = 0; CK and CK#
switching 50% duty cycle
–Varies by
manufacturer
µA
Dynamic operating
(per each input)
I
DDD n/a RESET# = VDD, VI = VIH(AC) or
V
IL(AC), Io = 0; CK and CK#
switching 50% duty cycle;
One data input switching at
t
CK/2, 50% duty cycle
–Varies by
manufacturer
µA
Input capacitance
(per device, per pin)
C
I All inputs
except RESET#
VI = VREF ±250mV;
V
DDQ = 1.8V
2.5 3.5 pF
Input capacitance
(per device, per pin)
C
I RESET# VI = VDDQ or VSSQ–Varies by
manufacturer
pF
PDF: 09005aef818e3e75/Source: 09005aef818e3df5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
htf5c32x72k.fm - Rev. B 2/07 EN
11 ©2005 Micron Technology, Inc. All rights reserved.
256MB: (x72, SR) 244-Pin DDR2 Mini-RDIMM
Register and PLL Specifications
Notes: 1. PLL timing and switching specifications are critical for proper operation of the DDR2 DIMM.
This is a subset of parameters for the specific PLL used. Detailed PLL information is available
in JEDEC standard JESD82.
Table 10: PLL Specifications
CU877 device or equivalent JESD82-8.01
Parameter Symbol Pins Condition Min Max Units
DC high-level input voltage
V
IH RESET# LVCMOS 0.65 × VDD –V
DC low-level input voltage
V
IL RESET# LVCMOS 0.35 × VDD V
Input voltage (limits)
V
IN RESET#, CK, CK# –0.3 VDDQ + 0.3 V
DC high-level input voltage
V
IH CK, CK# Differential input 0.65 × VDD –V
DC low-level input voltage
V
IL CK, CK# Differential input 0.35 × VDD V
Input differential-pair cross
voltage
V
IX CK, CK# Differential input (VDDQ/2) -
0.15
(VDDQ/2) +
0.15
V
Input differential voltage
V
ID(DC) CK, CK# Differential input 0.3 VDDQ + 0.4 V
Input differential voltage
V
ID(AC) CK, CK# Differential input 0.6 VDDQ + 0.4 V
Input current
I
I RESET# VI = VDDQ or VSSQ–1010µA
CK, CK# VI = VDDQ or VSSQ –250 250 µA
Output disabled current
I
ODL RESET# = VSSQ; VI = VIH(AC) or
VIL(DC)
100 µA
Static supply current
I
DDLD CK = CK# = LOW 500 µA
Dynamic supply
I
DD n/a CK, CK# = 270 MHz, all
outputs open
(not connected to PCB)
–300mA
Input capacitance
C
IN Each input VI = VDDQ or VSSQ23pF
Table 11: PLL Clock Driver Timing Requirements and Switching Characteristics
Parameter Symbol Min Max Units
Stabilization time
t
L– 15µs
Input clock slew rate
t
LS
I
1.0 4 V/ns
SSC modulation frequency
30 33 kHz
SSC clock input frequency deviation
0.0 0.50 %
PLL loop bandwidth (–3dB from unity gain)
2.0 MHz
PDF: 09005aef818e3e75/Source: 09005aef818e3df5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
htf5c32x72k.fm - Rev. B 2/07 EN
12 ©2005 Micron Technology, Inc. All rights reserved.
256MB: (x72, SR) 244-Pin DDR2 Mini-RDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Table 12: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 1.7 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
V
OL –0.4V
Input leakage current: V
IN = GND to VDDSPD
ILI 0.10 3 µA
Output leakage current: V
OUT = GND to VDDSPD
ILO 0.05 3 µA
Standby current
I
SB 1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 kHz
I
CC
R
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz
I
CC
W
23mA
Table 13: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F–300ns2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4

MT5HTF3272KY-667B2

Mfr. #:
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 256MB 244MRDIMM
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New from this manufacturer.
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