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MT5HTF3272KY-667B2

P1-P3P4-P6P7-P9P10-P12P13-P15
PDF: 09005aef818e3e75/Source: 09005aef818e3df5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
htf5c32x72k.fm - Rev. B 2/07 EN
13 ©2005 Micron Technology, Inc. All rights reserved.
256MB: (x72, SR) 244-Pin DDR2 Mini-RDIMM
Serial Presence-Detect
Table 14: Serial Presence-Detect Matrix
Byte Description Entry (Version) 256MB
0
Number of SPD bytes used by Micron
128 80
1
Total number of bytes in SPD device
256 08
2
Fundamental memory type
DDR2 SDRAM 08
3
Number of row addresses on SDRAM
13 0D
4
Number of column addresses on SDRAM
9, 10 0A
5
DIMM height and module ranks
30mm,
single rank
60
6
Module data width
72 48
7
Reserved
000
8
Module voltage interface levels
SSTL 1.8V 05
9
SDRAM cycle time,
t
CK
(CL = MAX value, see byte 18)
-667
-53E
-40E
30
3D
50
10
SDRAM access from clock,
t
AC (CL = MAX value, see byte 18)
-667
-53E
-40E
45
50
60
11
Module configuration type
ECC
ECC and parity
02
06
12
Refresh rate/type
7.81µs/SELF 82
13
SDRAM device width (primary SDRAM)
16 10
14
Error-checking SDRAM data width
16 10
15
Reserved
000
16
Burst lengths supported
4, 8 0C
17
Number of banks on SDRAM device
404
18
CAS latencies supported
-667 (5, 4, 3)
-53E/-40E (4, 3)
38
18
19
Module thickness
01
20
DDR2 DIMM type
Mini-RDIMM 10
21
SDRAM module attributes
1 PLL; 1 register 04
22
SDRAM device attributes: weak driver (01) and 50Ω ODT (03)
-667
-53E/-40E
03
01
23
SDRAM cycle time,
t
CK,
MAX CL - 1
-667
-53E/-40E
3D
50
24
SDRAM access from CK,
t
AC,
MAX CL - 1
-667
-53E
-40E
45
50
60
25
SDRAM cycle time,
t
CK,
MAX CL - 2
-667
-53E/-40E
50
00
26
SDRAM access from CK,
t
AC,
MAX CL - 2
-667
-53E/-40E
45
00
27
MIN row precharge time,
t
RP
3C
28
MIN row active-to-row active,
t
RRD
28
29
MIN RAS#-to-CAS# delay,
t
RCD
32
30
MIN RAS# pulse width,
t
RAS
-667/-53E
-40E
2D
28
31
Module rank density
128MB, 256MB,
512MB
40
PDF: 09005aef818e3e75/Source: 09005aef818e3df5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
htf5c32x72k.fm - Rev. B 2/07 EN
14 ©2005 Micron Technology, Inc. All rights reserved.
256MB: (x72, SR) 244-Pin DDR2 Mini-RDIMM
Serial Presence-Detect
Notes: 1. The
t
RC SPD values shown are JEDEC DDR2 device specification values. The actual Micron
DDR2 device specification is
t
RC = 55ns for all speed grades.
32
Address and command setup time,
t
IS
b
-667
-53E
-40E
20
25
35
33
Address and command hold time,
t
IH
b
-667
-53E
-40E
27
37
47
34
Data/data mask input setup time,
t
DS
b
-667/-53E
-40E
10
15
35
Data/data mask input hold time,
t
DH
b
-667
-53E
-40E
17
22
27
36
Write recovery time,
t
WR
3C
37
WRITE-to-READ command delay,
t
WTR
-667/-53E
-40E
1E
28
38
READ-to-PRECHARGE command delay,
t
RTP
1E
39
Memory analysis probe
00
40
Extension for bytes 41 and 42
00
41
MIN active-to-active/refresh time,
t
RC
1
-667/-53E
-40E
3C
37
42
MIN AUTO REFRESH-to-ACTIVE/AUTO REFRESH command period,
t
RFC
69
43
SDRAM device MAX cycle time,
t
CK (MAX)
80
44
SDRAM device MAX DQS–DQ skew time,
t
DQSQ
-667
-53E
-40E
18
1E
23
45
SDRAM device MAX read data hold skew factor,
t
QHS
-667
-53E
-40E
22
28
2D
46
PLL relock time
0F
47–61
Optional features, not supported
00
62
SPD revision
Release 1.2 12
63
Checksum for bytes 0–62
ECC/ECC and parity
-667
-53E
-40E
7E/82
29/2D
90/94
64
Manufacturer’s JEDEC ID code
MICRON 2C
65–71
Manufacturer’s JEDEC ID code
(continued) FF
72
Manufacturing location
1–12 01–0C
73–90
Module part number (ASCII)
– Variable data
91
PCB identification code
1–9 01–09
92
Identification code (continued)
000
93
Year of manufacture in BCD
– Variable data
94
Week of manufacture in BCD
– Variable data
95–98
Module serial number
– Variable data
99–127
Reserved for manufacturer-specific data
00
128–255
Reserved for customer-specific data
FF
Table 14: Serial Presence-Detect Matrix (continued)
Byte Description Entry (Version) 256MB
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
prodmktg@micron.com www.micron.com Customer Comment Line: 800-932-4992
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of
their respective owners.
This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range
for production devices. Although considered final, these specifications are subject to change, as further product
development and data characterization sometimes occur.
PDF: 09005aef818e3e75/Source: 09005aef818e3df5 Micron Technology, Inc., reserves the right to change products or specifications without notice.
htf5c32x72k.fm - Rev. B 2/07 EN
15 ©2005 Micron Technology, Inc. All rights reserved.
256MB: (x72, SR) 244-Pin DDR2 Mini-RDIMM
Module Dimensions
Module Dimensions
Figure 3: 244-Pin DDR2 Mini-RDIMM
Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical (TYP) where noted.
2. The dimensional diagram is for reference only. Refer to the JEDEC MO document for com-
plete design dimensions.
82.127 (3.233)
81.873 (3.223)
Front view
30.152 (1.187)
29.848 (1.175)
20.0 (0.787)
TYP
10.0 (0.394)
TYP
1.0 (0.039)
TYP
2.0 (0.079) R
X2
1.0 (0.039) R
X2
0.50 (0.02) R
1.80 (0.071) D
X2
6.0 (0.236)
TYP
2.0 (0.079)
TYP
78.0 (3.071)
TYP
0.60 (0.024)
TYP
0.45 (0.018)
TYP
PIN 1
PIN 122
42.9 (1.689)
TYP
Back view
3.3 (0.130)
TYP
3.6 (0.142) TYP
33.6 (1.323)
TYP
38.4 (1.512)
TYP
3.2 (0.126)
TYP
3.80 (0.150)
MAX
1.10 (0.043)
0.90 (0.035)
PIN 244
PIN 123
U1 U2 U3
U4
U6
U7 U8
U5
No DRAM devices this side of module
P1-P3P4-P6P7-P9P10-P12P13-P15

MT5HTF3272KY-667B2

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Buy MT5HTF3272KY-667B2
Manufacturer:
Micron
Description:
MOD DDR2 SDRAM 256MB 244MRDIMM
Lifecycle:
New from this manufacturer.
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