FDD107AN06LA0 Datasheet FDD107AN06LA0 | P1-P3

January 2004

FDD107AN06LA0 Rev. A1

FDD107AN06LA0

N-Channel PowerTrench

®

MOSFET

60V, 10A, 107mΩ

Features

•r

DS(ON)

= 92mΩ (Typ.), V

GS

= 5V, I

D

= 10A

•Q

g

(tot) = 4.2nC (Typ.), V

GS

= 5V

• Low Miller Charge

•Low Q

RR

Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101

Formerly developmental type 83524

Applications

• Motor / Body Load Control

• ABS Systems

• Powertrain Management

• Injection Systems

• DC-DC converters and Off-line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 12V and 24V systems

MOSFET Maximum Ratings T

C

= 25°C unless otherwise noted

Thermal Characteristics

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certificatio

n.

Symbol Parameter Ratings Units

V

DSS

Drain to Source Voltage 60 V

V

GS

Gate to Source Voltage ±20 V

I

D

Drain Current

10.9 A

Continuous (T

C

= 25

o

C, V

GS

= 10V)

Continuous (T

C

= 25

o

C, V

GS

= 5V) 10 A

Continuous (T

C

= 100

o

C, V

GS

= 5V) 7.1 A

Continuous (T

A

= 25

o

C, V

GS

= 5V, R

θJA

= 52

o

C/W) 3.4 A

Pulsed Figure 4 A

E

AS

Single Pulse Avalanche Energy (Note 1) 9 mJ

P

D

Power dissipation 25 W

Derate above 25

o

C0.17W/

o

C

T

J

, T

STG

Operating and Storage Temperature -55 to 175

o

C

R

θJC

Thermal Resistance Junction to Case TO-252 6.0

o

C/W

R

θJA

Thermal Resistance Junction to Ambient TO-252 100

o

C/W

R

θJA

Thermal Resistance Junction to Ambient TO-252, 1in

2

copper pad area 52

o

C/W

D

G

S

GATE

SOURCE

DRAIN (FLANGE)

TO-252AA

FDD SERIES

FDD107AN06LA0

Package Marking and Ordering Information

Electrical Characteristics

T

C

= 25°C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

(V

GS

= 5V)

Drain-Source Diode Characteristics

Notes:

1: Starting T

J

= 25°C, L = 270µH, I

AS

= 8A.

Device Marking Device Package Reel Size Tape Width Quantity

FDD107AN06LA0 FDD107AN06LA0 TO-252AA 330mm 16mm 2500 units

Symbol Parameter Test Conditions Min Typ Max Units

B

VDSS

Drain to Source Breakdown Voltage I

D

= 250µA, V

GS

= 0V 60 - - V

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 50V - - 1

µA

V

GS

= 0V T

C

= 150

o

C- -250

I

GSS

Gate to Source Leakage Current V

GS

= ±20V - - ±100 nA

V

GS(TH)

Gate to Source Threshold Voltage V

GS

= V

DS

, I

D

= 250µA1-3V

r

DS(ON)

Drain to Source On Resistance

I

D

= 10.9A, V

GS

= 10V - 0.076 0.091

Ω

I

D

= 10A, V

GS

= 5V - 0.092 0.107

I

D

= 10A, V

GS

= 5V,

T

J

= 175

o

C

- 0.221 0.254

C

ISS

Input Capacitance

V

DS

= 25V, V

GS

= 0V,

f = 1MHz

-360- pF

C

OSS

Output Capacitance - 45 - pF

C

RSS

Reverse Transfer Capacitance - 14 - pF

Q

g(TOT)

Total Gate Charge at 5V V

GS

= 0V to 5V

V

DD

= 30V

I

D

= 10A

I

g

= 1.0mA

4.2 5.5 nC

Q

g(TH)

Threshold Gate Charge V

GS

= 0V to 1V - 0.5 0.7 nC

Q

gs

Gate to Source Gate Charge - 1.9 - nC

Q

gs2

Gate Charge Threshold to Plateau - 1.4 - nC

Q

gd

Gate to Drain “Miller” Charge - 1.5 - nC

t

ON

Turn-On Time

V

DD

= 30V, I

D

= 10A

V

GS

= 5V, R

GS

= 47Ω

--100ns

t

d(ON)

Turn-On Delay Time - 13 - ns

t

r

Rise Time - 54 - ns

t

d(OFF)

Turn-Off Delay Time - 17 - ns

t

f

Fall Time - 18 - ns

t

OFF

Turn-Off Time - - 53 ns

V

SD

Source to Drain Diode Voltage

I

SD

= 10A - - 1.25 V

I

SD

= 5A - - 1.0 V

t

rr

Reverse Recovery Time I

SD

= 10A, dI

SD

/dt = 100A/µs- -32ns

Q

RR

Reverse Recovered Charge I

SD

= 10A, dI

SD

/dt = 100A/µs- -27nC

FDD107AN06LA0

Typical Characteristics T

C

= 25°C unless otherwise noted

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

Figure 2. Maximum Continuous Drain Current vs

Case Temperature

Figure 3. Normalized Maximum Transient Thermal Impedance

Figure 4. Peak Current Capability

T

C

, CASE TEMPERATURE (

o

C)

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

0.2

0.4

0.6

0.8

1.0

1.2

125

150

0

3

6

9

12

25 50 75 100 125 150 175

I

D

, DRAIN CURRENT (A)

T

C

, CASE TEMPERATURE (

o

C)

V

GS

= 10V

V

GS

= 5V

0.01

0.1

1

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

-5

2

t, RECTANGULAR PULSE DURATION (s)

Z

θJC

, NORMALIZED

THERMAL IMPEDANCE

NOTES:

DUTY FACTOR: D = t

1

/t

2

PEAK T

J

= P

DM

x Z

θJC

x R

θJC

+ T

C

P

DM

t

1

t

2

0.5

0.2

0.1

0.05

0.01

0.02

DUTY CYCLE - DESCENDING ORDER

SINGLE PULSE

10

100

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

20

I

DM

, PEAK CURRENT (A)

t, PULSE WIDTH (s)

T

C

= 25

o

C

I = I

25

175 - T

C

150

FOR TEMPERATURES

ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

V

GS

= 10V

V

GS

= 5V

FDD107AN06LA0

FDD107AN06LA0

Products related to this Datasheet