CMOS Low Voltage
2.5 Ω Dual SPDT Switch
Data Sheet
ADG736
Rev. D
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FEATURES
1.8 V to 5.5 V single supply
Automotive temperature range: −40°C to +125°C
2.5 Ω (typical) on resistance
Low on resistance flatness
−3 dB bandwidth > 200 MHz
Rail-to-rail operation
10-lead MSOP package
Fast switching times
t
ON
: 16 ns
t
OFF
: 8 ns
Typical power consumption (<0.01 μW)
TTL-/CMOS-compatible
Qualified for automotive applications
APPLICATIONS
USB 1.1 signal switching circuits
Cell phones
PDAs
Battery-powered systems
Communications systems
Sample-and-hold systems
Audio signal routing
Audio and video switching
Mechanical reed relay replacement
FUNCTIONAL BLOCK DIAGRAM
00046-001
SWITCHES SHOWN
FOR A LOGIC 1 INPUT
ADG736
S1A
S1B
D1
IN1
S2B
IN2
D2
S2A
2
10
6
9
1
4
7
5
Figure 1.
GENERAL DESCRIPTION
The ADG736 is a monolithic device comprising two independ-
ently selectable CMOS single pole, double throw (SPDT) switches.
These switches are designed using a submicron process that
provides low power dissipation yet gives high switching speed,
low on resistance, low leakage currents, and wide input signal
bandwidth.
The on resistance profile is very flat over the full analog signal
range. This ensures excellent linearity and low distortion when
switching audio signals. Fast switching speed also makes the
part suitable for video signal switching.
The ADG736 operates from a single 1.8 V to 5.5 V supply,
making it ideally suited to portable and battery-powered
instruments.
Each switch conducts equally well in both directions when on, and
each has an input signal range that extends to the power supplies.
The ADG736 exhibits break-before-make switching action.
The ADG736 is available in a 10-lead MSOP package.
PRODUCT HIGHLIGHTS
1. 1.8 V to 5.5 V Single-Supply Operation. The ADG736
offers high performance, including low on resistance and
fast switching times. It is fully specified and guaranteed
with 3 V and 5 V supply rails.
2. Ver y Low R
ON
(4.5 Ω Maximum at 5 V, 8 Ω Maximum at 3 V).
At a supply voltage of 1.8 V, R
ON
is typically 35 Ω over the
temperature range.
3. Low On Resistance Flatness.
4. −3 dB Bandwidth > 200 MHz.
5. Low Power Dissipation. CMOS construction ensures low
power dissipation.
6. Fast t
ON
/t
OFF
.
7. Break-Before-Make Switching Action.
8. 10-Lead MSOP Package.
