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ADG736BRMZ

P1-P3P4-P6P7-P9P10-P12P13-P13
Data Sheet ADG736
Rev. D | Page 3 of 12
SPECIFICATIONS
V
DD
= 5 V ± 10%, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.
Table 1.
Parameter
B Version
Unit Test Conditions/Comments 25°C
−40°C to
+85°C
−40°C to
+125°C
ANALOG SWITCH
Analog Signal Range 0 V to V
DD
V
On Resistance (R
ON
) 2.5
Ω typ V
S
= 0 V to V
DD
, I
DS
= −10 mA;
see Figure 10
4 4.5 7 Ω max
On Resistance Match Between Channels (∆R
ON
) 0.1
Ω typ V
S
= 0 V to V
DD
, I
DS
= −10 mA
0.4 0.4 Ω max
On Resistance Flatness (R
FL AT (ON)
) 0.5
Ω typ V
S
= 0 V to V
DD
, I
DS
= −10 mA
1.2 1.5 Ω max
LEAKAGE CURRENTS
V
DD
= 5.5 V
Source Off Leakage I
S
(Off ) ±0.01
1 nA typ V
S
= 4.5 V/1 V, V
D
= 1 V/4.5 V;
see Figure 11
Channel On Leakage I
D
, I
S
(On) ±0.01
5 nA typ V
S
= V
D
= 1 V or 4.5 V; see Figure 12
DIGITAL INPUTS
Input High Voltage, V
INH
2.4 2.4 V min
Input Low Voltage, V
INL
0.8 0.8 V max
Input Current, I
INL
or I
INH
0.005
µA typ V
IN
= V
INL
or V
INH
± 0.1 ± 0.1 µA max
DYNAMIC CHARACTERISTICS
1
t
ON
12
ns typ
R
L
= 300 Ω, C
L
= 35 pF
16 16 ns max V
S
= 3 V; see Figure 13
t
OFF
5
ns typ
R
L
= 300 Ω, C
L
= 35 pF
8 8 ns max V
S
= 3 V; see Figure 13
Break-Before-Make Time Delay, t
D
7
ns typ
R
L
= 300 Ω, C
L
= 35 pF
1 1 ns min V
S1
= V
S2
= 3 V; see Figure 14
Off Isolation
–62
dB typ
R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–82
dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 15
Channel-to-Channel Crosstalk –62
dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
–82
dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 16
Bandwidth (–3 dB) 200
MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 17
C
S
(Off ) 9 pF typ
C
D
, C
S
(On) 32 pF typ
POWER REQUIREMENTS
V
DD
= 5.5 V
I
DD
0.001 µA typ Digital inputs = 0 V or 5 V
1.0 1.0 µA max
1
Guaranteed by design; not subject to production test.
ADG736 Data Sheet
Rev. D | Page 4 of 12
V
DD
= 3 V ± 10%, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.
Table 2.
Parameter
B Version
Unit Test Conditions/Comments 25°C
−40°C to
+85°C
−40°C to
+125°C
ANALOG SWITCH
Analog Signal Range
0 V to V
DD
V
On Resistance (R
ON
) 5 5.5 Ω typ V
S
= 0 V to V
DD
, I
DS
= −10 mA;
see Figure 10
8
Ω max
See Figure 10
On Resistance Match Between Channels (∆R
ON
) 0.1
Ω typ V
S
= 0 V to V
DD
, I
DS
= −10 mA
0.4 0.4 Ω max
On Resistance Flatness (R
FL AT (O N)
)
2.5
Ω typ
V
S
= 0 V to V
DD
, I
DS
= −10 mA
LEAKAGE CURRENTS
V
DD
= 3.3 V
Source Off Leakage I
S
(Off) ±0.01
1 nA typ V
S
= 3 V/1 V, V
D
= 1 V/3 V;
see Figure 11
Channel On Leakage I
D
, I
S
(On)
±0.01
5 nA typ V
S
= V
D
= 1 V or 3 V; see Figure 12
DIGITAL INPUTS
Input High Voltage, V
INH
2.0
V min
Input Low Voltage, V
INL
0.4 0.8 V max
Input Current, I
INL
or I
INH
0.005
µA typ V
IN
= V
INL
or V
INH
±0.1 ± 0.1 µA max
DYNAMIC CHARACTERISTICS
1
t
ON
14
ns typ R
L
= 300 Ω, C
L
= 35 pF
20 20 ns max V
S
= 2 V; see Figure 13
t
OFF
6
ns typ R
L
= 300 Ω, C
L
= 35 pF
10 10 ns max V
S
= 2 V; see Figure 13
Break-Before-Make Time Delay, t
D
7
ns typ R
L
= 300 Ω, C
L
= 35 pF
1 1 ns min V
S1
= V
S2
= 2 V; see Figure 14
Off Isolation
−62
dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−82
dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 15
Channel-to-Channel Crosstalk
−62
dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 10 MHz
−82
dB typ R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 16
Bandwidth (−3 dB) 200
MHz typ R
L
= 50 Ω, C
L
= 5 pF; see Figure 17
C
S
(Off ) 9 pF typ
C
D
, C
S
(On) 32 pF typ
POWER REQUIREMENTS
V
DD
= 3.3 V
I
DD
0.001 µA typ Digital inputs = 0 V or 3 V
1.0 1.0 µA max
1
Guaranteed by design; not subject to production test.
Data Sheet ADG736
Rev. D | Page 5 of 12
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter Rating
V
DD
to GND
−0.3 V to +6 V
Analog, Digital Inputs
1
−0.3 V to V
DD
+ 0.3 V or 30 mA,
whichever occurs first
Continuous Current, S or D
30 mA
Peak Current, S or D 100 mA (Pulsed at 1 ms, 10%
duty cycle maximum)
Operating Temperature Range
Automotive
−40°C to +125°C
Storage Temperature Range
−65°C to +150°C
Junction Temperature 150°C
MSOP Package, Power Dissipation 315 mW
θ
JA
Thermal Impedance 205°C/W
Lead Temperature (Soldering,
10 sec)
300°C
IR Reflow (Peak Temperature,
<20 sec)
235°C
Lead-Free Reflow Soldering
Peak Temperature 260(+0/−5)°C
Time at Peak Temperature 10 sec to 40 sec
ESD 2 kV
1
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
P1-P3P4-P6P7-P9P10-P12P13-P13

ADG736BRMZ

Mfr. #:
Buy ADG736BRMZ
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 82dB 2.5 Ohm 200MHz CMOS Dual SPDT
Lifecycle:
New from this manufacturer.
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