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NGTB20N120IHLWG

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 1
1 Publication Order Number:
NGTB20N120IHL/D
NGTB20N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application
• Low Gate Charge
• These are Pb−Free Devices
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
1200 V
Collector current
@ T
C = 25°C
@ TC = 100°C
I
C
40
20
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
200 A
Diode forward current
@ T
C = 25°C
@ TC = 100°C
I
F
40
20
A
Diode pulsed current, T
pulse
limited
by T
Jmax
I
FM
200 A
Gate−emitter voltage V
GE
$20 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
P
D
192
77
W
Operating junction temperature
range
T
J
−55 to +150 °C
Storage temperature range T
stg
−55 to +150 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−247
CASE 340L
STYLE 4
C
G
20 A, 1200 V
V
CEsat
= 1.80 V
E
off
= 0.7 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB20N120IHLWG TO−247
(Pb−Free)
30 Units / Rail
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
20N120IHL
AYWWG
G
E
C
NGTB20N120IHLWG
http://onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.65 °C/W
Thermal resistance junction−to−case, for Diode
R
q
JC
2.0 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
1200 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 20 A
V
GE
= 15 V, I
C
= 20 A, T
J
= 150°C
V
CEsat
−
−
1.80
2.0
2.2
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 250 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
=
150°C
I
CES
−
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V, V
CE
= 0 V I
GES
− − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 4700 −
pF
Output capacitance C
oes
− 155 −
Reverse transfer capacitance C
res
− 100 −
Gate charge total
V
CE
= 600 V, I
C
= 20 A, V
GE
= 15 V
Q
g
200
nC
Gate to emitter charge Q
ge
36
Gate to collector charge Q
gc
98
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
T
J
= 25°C
V
CC
= 600 V, I
C
= 20 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(off)
235
ns
Fall time t
f
180
Turn−off switching loss E
off
0.7 mJ
Turn−off delay time
T
J
= 125°C
V
CC
= 600 V, I
C
= 20 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(off)
235
ns
Fall time t
f
250
Turn−off switching loss E
off
1.60 mJ
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 20 A
V
GE
= 0 V, I
F
= 20 A, T
J
= 150°C
V
F
1.55
1.65
1.75 V
NGTB20N120IHLWG
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
543210
0
20
40
60
80
100
120
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
GE
, GATE−EMITTER VOLTAGE (V)
151050
0
20
40
60
80
100
120
Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
F
, FORWARD VOLTAGE (V)
1751501251007550250
10
100
1000
10,000
3.02.52.01.51.00.50
0
20
40
60
80
120
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
I
F
, FORWARD CURRENT (A)
V
GE
= 20 to 13 V
T
J
= 25°C
10 V
9 V
8 V
7 V
543210
0
20
40
60
80
100
120
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 11 V
T
J
= 150°C
10 V
9 V
8 V
7 V
543210
0
20
100
40
80
60
120
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 13 V
T
J
= −40°C
10 V
9 V
8 V
T
J
= 25°C
T
J
= 150°C
200
100
T
J
= 25°C T
J
= 125°C
11 V
11 V
7 V
C
ies
C
oes
C
res
P1-P3P4-P6P7-P9

NGTB20N120IHLWG

Mfr. #:
Buy NGTB20N120IHLWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/20A IGBT FSI TO-2
Lifecycle:
New from this manufacturer.
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