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NGTB20N120IHLWG

P1-P3P4-P6P7-P9
NGTB20N120IHLWG
http://onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature
Q
G
, GATE CHARGE (nC) TEMPERATURE (°C)
150100500
0
2
4
6
8
12
14
16
140120100806040200
0
0.2
0.4
0.6
0.8
1.0
1.8
Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. I
C
TEMPERATURE (°C) I
C
, COLLECTOR (A)
140120100806040200
1
10
100
1000
2622181410
0
0.5
1.0
1.5
2.0
3.0
Figure 11. Switching Time vs. I
C
Figure 12. Energy Loss vs. Rg
I
C
, COLLECTOR (A)
Rg, GATE RESISTOR (W)
302622181410
1
10
100
1000
756555453525155
0
0.2
0.6
0.8
1.2
1.4
1.8
2.0
V
GE
, GATE−EMITTER VOLTAGE (V)
E
off
, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
E
off
, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
E
off
, TURN−OFF SWITCHING LOSS (mJ)
250
10
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
Rg = 10 W
200 V
400 V
600 V
160
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
Rg = 10 W
t
f
t
d(off)
30 34
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
34
V
CE
= 600 V
V
GE
= 15 V
T
J
= 150°C
Rg = 10 W
t
f
t
d(off)
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
T
J
= 150°C
85
1.2
1.4
1.6
200
2.5
38 42
38 42
0.4
1.0
1.6
NGTB20N120IHLWG
http://onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. V
CE
Rg, GATE RESISTOR (W)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
756555453525155
10
100
1000
10,000
725675625575525475425375
0
0.2
0.4
0.6
0.8
1.2
1.4
2.0
Figure 15. Switching Time vs. V
CE
Figure 16. Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
725675625575525475425375
1
10
100
1000
Figure 17. Reverse Bias Safe Operating Area
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
SWITCHING TIME (ns)
E
off
, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
85
t
f
t
d(off)
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
T
J
= 150°C
775
1.0
V
GE
= 15 V
I
C
= 20 A
Rg = 10 W
T
J
= 150°C
775
t
f
t
d(off)
V
GE
= 15 V
I
C
= 20 A
Rg = 10 W
T
J
= 150°C
1.6
1.8
1000100101
0.01
0.1
1
10
100
1000
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
1000100101
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
NGTB20N120IHLWG
http://onsemi.com
6
TYPICAL CHARACTERISTICS
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 18. IGBT Transient Thermal Impedance
PULSE TIME (sec)
R(t) (°C/W)
Figure 19. Diode Transient Thermal Impedance
PULSE TIME (sec)
R(t) (°C/W)
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
R
q
JC
= 0.65
0.001
0.01
0.1
1
10
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
R
q
JC
= 2.0
Junction
Case
C
1
C
2
R
1
R
2
R
n
C
i
= t
i
/R
i
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
t
i
(sec)
1.48E−4
0.002
0.03
0.1
2.0
R
i
(°C/W)
0.25813
0.57713
0.67147
0.38693
0.1057
Junction
Case
C
1
C
2
R
1
R
2
R
n
C
i
= t
i
/R
i
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
t
i
(sec)
1.0E−4
1.76E−4
0.002
0.1
2.0
R
i
(°C/W)
0.02659
0.06231
0.10246
0.2121
0.1057
Figure 20. Test Circuit for Switching Characteristics
P1-P3P4-P6P7-P9

NGTB20N120IHLWG

Mfr. #:
Buy NGTB20N120IHLWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/20A IGBT FSI TO-2
Lifecycle:
New from this manufacturer.
Delivery:
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