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SI3590DV-T1-E3
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
www.vishay.com
4
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
Vishay Siliconix
Si3590DV
N-CHANNEL TYPICAL CHARAC
TERISTICS
25 °C unless note
d
Source-Drain Diode Forward Voltage
Threshold Voltage
1.2 1.5
0.1
1
10
0.00 0.3
0.6
0.9
T
J
= 25 °C
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)
I
S
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
2
5 5
0 7
5 100
125
150
I
D
= 250 µA
V
ariance (V)
V
GS(th)
T
J
- T
emperature
(°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Am
bient
0.00
0.05
0.10
0.15
0.20
0.25
01234
5
V
GS
- Gate-to-Source
Voltage
(V)
- On-Resistance (
Ω
)
R
DS(on)
I
D
= 3 A
0.01
0
1
6
8
2
4
10
30
0.1
P
ow
er (W)
Time (s)
Safe Operating Area, Junction-to-Case
100
1
0.1 1
1
0 100
0.01
10
1 ms
- Drain Current (A)
I
D
0.1
T
C
= 25 °C
Single Pulse
10 ms
100 ms
DC
100
µ
s
I
DM
Limited
I
D(
on)
Limited
BV
DS
S
Limited
10 s, 1 s
V
DS
-
Drain-to-Source V
oltage
(V)
*V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Limited by R
DS(on)
*
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
www.vishay.com
5
Vishay Siliconix
Si3590DV
N-CHANNEL TYP
ICAL CHARACTE
RISTICS
25 °C unless noted
Normalized Thermal T
ransient Impedance, Junction
-to-Ambient
Square
W
ave Pulse Duration (s)
Normalized Ef
fective
T
ransient
Thermal Impedance
2
1
0.1
0.01
10
-3
10
-2
1 1
0 600
10
-1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
100
1.
Duty Cycle, D =
2. Per Unit Base = R
th
J
A
= 87 °C/W
3. T
JM
- T
A
= P
DM
Z
th
J
A
(t
)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transien
t Impedance, Junction
-to-Foot
10
-3
10
-2
1
10
10
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square
W
a
ve Pulse Dur
ation (s)
Normalized Ef
fectiv
e Transient
Thermal Impedance
www.vishay.com
6
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
Vishay Siliconix
Si3590DV
P-CHANNEL TYPICAL CHA
RACTERISTICS
25 °C unless no
ted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
1
2
3
4
5
6
7
8
0
1234
5
V
GS
= 5 V thru 3.5 V
1.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)
I
D
2.5 V
2 V
3 V
0.00
0.15
0.30
0.45
0.60
0.75
01234
56
78
V
GS
= 4.5
V
V
GS
= 2.5
V
- On-Resistance (
Ω
)
R
DS(on)
I
D
- Drain Current (A)
0
1
2
3
4
5
6
01234
5
V
DS
= 15
V
I
D
= 2 A
- Gate-to-Source
V
oltage (V)
Q
g
-
Total
Gate Charge
(nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction
Temperature
0
1
2
3
4
5
6
7
8
0.0 0.5 1.0 1.5 2.0
2.5 3.0 3.5
T
C
= - 55 °C
125 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)
I
D
25 °C
0
100
200
300
400
500
0
6
12
18
24
30
C
rss
C
oss
C
iss
V
DS
- Drain-to-Source
V
oltage (V)
C - Capacitance (pF)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
- 50
- 25
0
2
5 5
0 7
5 100
125
150
V
GS
= 4.5 V
I
D
= 2 A
T
J
- Junction T
emperature
(°C)
(Normalized)
- On-Resistance
R
DS(on)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
SI3590DV-T1-E3
Mfr. #:
Buy SI3590DV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
Lifecycle:
New from this manufacturer.
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