SI3590DV-T1-GE3

SI3590DV-T1-GE3
Mfr. #:
SI3590DV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
Lifecycle:
New from this manufacturer.
Datasheet:
SI3590DV-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3590DV-T1-GE3 DatasheetSI3590DV-T1-GE3 Datasheet (P4-P6)SI3590DV-T1-GE3 Datasheet (P7-P9)SI3590DV-T1-GE3 Datasheet (P10-P12)SI3590DV-T1-GE3 Datasheet (P13)
ECAD Model:
More Information:
SI3590DV-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSOP-6
Number of Channels:
2 Channel
Transistor Polarity:
N-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
3 A, 2 A
Rds On - Drain-Source Resistance:
77 mOhms, 170 mOhms
Vgs th - Gate-Source Threshold Voltage:
600 mV
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
4.5 nC, 6 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.15 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI3
Transistor Type:
1 N-Channel, 1 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
10 S, 5 S
Fall Time:
7 ns, 20 ns
Product Type:
MOSFET
Rise Time:
12 ns, 15 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
13 ns, 20 ns
Typical Turn-On Delay Time:
5 ns, 5 ns
Part # Aliases:
SI3590DV-GE3
Unit Weight:
0.000705 oz
Tags
SI3590DV-T, SI3590D, SI359, SI35, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
MOSFET N/P-CH 30V 2.5A 6-TSOP / Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
***ure Electronics
N- and P-Channel 30-V (D-S) MOSFET
***ied Electronics & Automation
30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
***nell
MOSFET, NP CH, 30V, W DIODE, TSOP6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.062ohm; Power Dissipation Pd:830mW
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
N & P Channel Pair Thermally Enhanced MOSFETs
Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design. 
Part # Mfg. Description Stock Price
SI3590DV-T1-GE3
DISTI # V72:2272_09216705
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant
1760
  • 1000:$0.3671
  • 500:$0.4581
  • 250:$0.5280
  • 100:$0.5526
  • 25:$0.7249
  • 10:$0.7986
  • 1:$0.9880
SI3590DV-T1-GE3
DISTI # V36:1790_09216705
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000000:$0.3136
  • 1500000:$0.3138
  • 300000:$0.3265
  • 30000:$0.3469
  • 3000:$0.3502
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3CT-ND
Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4640In Stock
  • 1000:$0.3980
  • 500:$0.4975
  • 100:$0.6293
  • 10:$0.8210
  • 1:$0.9300
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3DKR-ND
Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4640In Stock
  • 1000:$0.3980
  • 500:$0.4975
  • 100:$0.6293
  • 10:$0.8210
  • 1:$0.9300
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3TR-ND
Vishay SiliconixMOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 30000:$0.3059
  • 15000:$0.3140
  • 6000:$0.3260
  • 3000:$0.3502
SI3590DV-T1-GE3
DISTI # 33699431
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant
9000
  • 3000:$0.2700
SI3590DV-T1-GE3
DISTI # 32404506
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R
RoHS: Compliant
1760
  • 22:$0.9880
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R (Alt: SI3590DV-T1-GE3)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel
Europe - 0
  • 1000:€0.3489
  • 500:€0.3559
  • 100:€0.3609
  • 50:€0.3749
  • 25:€0.4059
  • 10:€0.4719
  • 1:€0.6929
SI3590DV-T1-GE3
DISTI # SI3590DV-T1-GE3
Vishay IntertechnologiesTrans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3590DV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2939
  • 18000:$0.3029
  • 12000:$0.3109
  • 6000:$0.3239
  • 3000:$0.3339
SI3590DV-T1-GE3
DISTI # 35R0053
Vishay IntertechnologiesDUAL N/P CH MOSFET, 30V, 2A, TSOP,Transistor Polarity:N and P Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.062ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.5V RoHS Compliant: Yes0
  • 50000:$0.2970
  • 30000:$0.3110
  • 20000:$0.3340
  • 10000:$0.3570
  • 5000:$0.3870
  • 1:$0.3960
SI3590DV-T1-GE3
DISTI # 64T4059
Vishay IntertechnologiesMOSFET Transistor, N and P Channel, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V RoHS Compliant: Yes5522
  • 500:$0.5060
  • 250:$0.5530
  • 100:$0.5990
  • 50:$0.6560
  • 25:$0.7130
  • 10:$0.7700
  • 1:$0.9500
SI3590DV-T1-GE3
DISTI # 70459525
Vishay Siliconix30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$0.4920
  • 6000:$0.4650
SI3590DV-T1-GE3
DISTI # 781-SI3590DV-GE3
Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
RoHS: Compliant
8483
  • 1:$0.9100
  • 10:$0.7330
  • 100:$0.5560
  • 500:$0.4600
  • 1000:$0.3680
  • 3000:$0.3330
  • 6000:$0.3100
  • 9000:$0.2990
SI3590DV-T1-GE3
DISTI # 2056715
Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP616298
  • 500:£0.3580
  • 250:£0.3960
  • 100:£0.4340
  • 10:£0.6250
  • 1:£0.8100
SI3590DV-T1-GE3
DISTI # 2056715
Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP6
RoHS: Compliant
5804
  • 3000:$0.5030
  • 1000:$0.5550
  • 500:$0.6930
  • 100:$0.8390
  • 10:$1.1100
  • 1:$1.3700
SI3590DV-T1-GE3
DISTI # 2056715RL
Vishay IntertechnologiesMOSFET, NP CH, 30V, W DIODE, TSOP6
RoHS: Compliant
0
  • 3000:$0.5030
  • 1000:$0.5550
  • 500:$0.6930
  • 100:$0.8390
  • 10:$1.1100
  • 1:$1.3700
SI3590DV-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR
RoHS: Compliant
Americas - 3000
  • 3000:$0.2350
  • 6000:$0.2230
  • 12000:$0.2160
  • 18000:$0.2100
Image Part # Description
ADL5904ACPZN-R7

Mfr.#: ADL5904ACPZN-R7

OMO.#: OMO-ADL5904ACPZN-R7

RF Detector RMS TruPwr Detectors
SN74AUP1G32DCKR

Mfr.#: SN74AUP1G32DCKR

OMO.#: OMO-SN74AUP1G32DCKR

Logic Gates Lo-Pwr Sgl 2-Input Pos-OR Gate
ATMEGA4809-MFR

Mfr.#: ATMEGA4809-MFR

OMO.#: OMO-ATMEGA4809-MFR

8-bit Microcontrollers - MCU 20MHz, 48KB, UQFN48, Ind 125C, Green, T&R
ATTINY817-MN

Mfr.#: ATTINY817-MN

OMO.#: OMO-ATTINY817-MN

8-bit Microcontrollers - MCU 20MHz,8KB,QFN24,Ind 105C,Green,Tray
LT8608EMSE#PBF

Mfr.#: LT8608EMSE#PBF

OMO.#: OMO-LT8608EMSE-PBF

Switching Voltage Regulators 42V/1.5A Peak Synchronous Step-Down Regulator with 2.5uA Quiescent Current
LP5912-3.3DRVR

Mfr.#: LP5912-3.3DRVR

OMO.#: OMO-LP5912-3-3DRVR

LDO Voltage Regulators LP5912 Low-Noise 500mA LDO
LP5912-3.3DRVR

Mfr.#: LP5912-3.3DRVR

OMO.#: OMO-LP5912-3-3DRVR-TEXAS-INSTRUMENTS

LDO Voltage Regulators Ultra-Low-Noise 500-mA Linear Regulator for RF and Analog Circuits 6-SON -40 to 125
SN74AUP1G32DCKR

Mfr.#: SN74AUP1G32DCKR

OMO.#: OMO-SN74AUP1G32DCKR-TEXAS-INSTRUMENTS

New and Original
ABS07AIG-32.768KHZ-9-T

Mfr.#: ABS07AIG-32.768KHZ-9-T

OMO.#: OMO-ABS07AIG-32-768KHZ-9-T-ABRACON

CRYSTAL 32.768KHZ 9PF SMD
TAJA475K016RNJV

Mfr.#: TAJA475K016RNJV

OMO.#: OMO-TAJA475K016RNJV-AVX

Tantalum Capacitors - Solid SMD 16V 4.7uF 10% 1206 ESR= 4 Ohms
Availability
Stock:
Available
On Order:
1991
Enter Quantity:
Current price of SI3590DV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.91
$0.91
10
$0.73
$7.33
100
$0.56
$55.60
500
$0.46
$230.00
1000
$0.37
$368.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
  • Si7655DN -20 V P-Channel MOSFET
    Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
  • P-Channel MOSFETs
    Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
  • Si8410DB Chipscale N-Channel MOSFET
    Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
  • 50 A VRPower® Solution (DrMOS)
    Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
  • Compare SI3590DV-T1-GE3
    SI3590DVT1 vs SI3590DVT1E3 vs SI3590DVT1E3CUTTAPE
  • PowerPAIR®
    Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
Top