PartNumber | SI3590DV-T1-E3 | SI3590DV | SI3590DV-T1 |
Description | MOSFET -30V Vds 12V Vgs TSOP-6 N&P PAIR | ||
Manufacturer | Vishay | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TSOP-6 | - | - |
Number of Channels | 2 Channel | - | - |
Transistor Polarity | N-Channel, P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 2.5 A, 1.7 A | - | - |
Rds On Drain Source Resistance | 77 mOhms, 170 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 600 mV | - | - |
Vgs Gate Source Voltage | 12 V | - | - |
Qg Gate Charge | 3 nC, 3.8 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 0.83 W | - | - |
Configuration | Dual | - | - |
Channel Mode | Enhancement | - | - |
Tradename | TrenchFET | - | - |
Packaging | Reel | - | - |
Series | SI3 | - | - |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 10 S, 5 S | - | - |
Fall Time | 7 ns, 20 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 12 ns, 15 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns, 20 ns | - | - |
Typical Turn On Delay Time | 5 ns, 5 ns | - | - |
Part # Aliases | SI3590DV-T1 | - | - |
Unit Weight | 0.000705 oz | - | - |