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NSTB1002DXV5T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1 Publication Order Number:
NSTB1002DXV5/D
NSTB1002DXV5T1G,
NSTB1002DXV5T5G
Preferred Devices
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSTB1002DXV5T1G
series, two complementary devices are housed in the SOT−553
package which is ideal for low power surface mount applications
where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• These are Pb−Free Devices
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Rating Symbo
l
Value
Unit
Q1 Q2
Collector-Base Voltage V
CBO
−40 50 Vdc
Collector-Emitter Voltage V
CEO
−40 50 Vdc
Collector Current I
C
−200 100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C
P
D
357 (Note 1)
2.9 (Note 1)
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient
R
q
JA
350 (Note 1) °C/W
Characteristic
(Both Junctions Heated)
Symbo
l
Max Unit
Total Device Dissipation T
A
= 25°C
Derate above 25°C
P
D
500 (Note 1)
4.0 (Note 1)
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient
R
q
JA
250 (Note 1) °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
45
Q1
Q2
R1
R1
R2
312
http://onsemi.com
SOT−553
CASE 463B
U9 MG
G
1
5
1
5
U9 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Device Package Shipping
ORDERING INFORMATION
NSTB1002DXV5T1G SOT−553
(Pb−Free)
4 mm pitch
4000/Tape & Ree
l
NSTB1002DXV5T5G SOT−553
(Pb−Free)
2 mm pitch
8000/Tape & Ree
l
NSTB1002DXV5T1G, NSTB1002DXV5T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2) V
(BR)CEO
−40 − Vdc
Collector−Base Breakdown Voltage V
(BR)CBO
−40 − Vdc
Emitter−Base Breakdown Voltage V
(BR)EBO
−5.0 − Vdc
Base Cutoff Current I
BL
− −50 nAdc
Collector Cutoff Current I
CEX
− −50 nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
h
FE
60
80
100
60
30
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−0.25
−0.4
Vdc
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product f
T
250 − MHz
Output Capacitance C
obo
− 4.5 pF
Input Capacitance C
ibo
− 10.0 pF
Input Impedance
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
ie
2.0 12
kW
Voltage Feedback Ratio
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
re
0.1 10 X 10
−4
Small−Signal Current Gain
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
fe
100 400 −
Output Admittance
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
oe
3.0 60
mmhos
Noise Figure
(V
CE
= −5.0 Vdc, I
C
= −100 mAdc, R
S
= 1.0 kW, f = 1.0 kHz)
nF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc) t
d
− 35
ns
Rise Time (I
C
= −10 mAdc, I
B1
= −1.0 mAdc) t
r
− 35
Storage Time (V
CC
= −3.0 Vdc, I
C
= −10 mAdc) t
s
− 225
ns
Fall Time (I
B1
= I
B2
= −1.0 mAdc) t
f
− 75
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100 nAdc
Collector-Emitter Cutoff Current
(V
CB
= 50 V, I
B
= 0)
I
CEO
− − 500 nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0, I
C
= 5.0 mA)
I
EBO
− − 0.1 mAdc
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
NSTB1002DXV5T1G, NSTB1002DXV5T5G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS
Collector-Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector-Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − − Vdc
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
h
FE
80 140 −
Collector−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(SAT)
− − 0.25 Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2 Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − − Vdc
Input Resistor R1 33 47 61
kW
Resistor Ratio R1/R2 0.8 1.0 1.2
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
Figure 1. Derating Curve
250
200
150
100
50
0
−50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
q
JA
= 833°C/W
P1-P3P4-P6

NSTB1002DXV5T1G

Mfr. #:
Buy NSTB1002DXV5T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Lifecycle:
New from this manufacturer.
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