NSTB1002DXV5T1G

NSTB1002DXV5T1G, NSTB1002DXV5T5G
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS — PNP TRANSISTOR
Figure 2. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50
70
0.2 0.3
0.1
100
1.00.7
200
30205.0 7.0
FE
V
CE
= 1.0 V
T
J
= +125°C
+25°C
−55 °C
NSTB1002DXV5T1G, NSTB1002DXV5T5G
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5
TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN
Figure 3. V
CE(sat)
versus I
C
0246810
100
10
1
0.1
0.01
0.001
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=−25°C
75°C
25°C
Figure 4. DC Current Gain
Figure 5. Output Capacitance
100
10
1
0.1
010 203040 50
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Output Current versus Input Voltage
1000
10
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
25°C
−25°C
100
10
1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 7. Input Voltage versus Output Current
0
20 40
50
10
1
0.1
0.01
I
C
, COLLECTOR CURRENT (mA)
25°C
75°C
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
V
CE
= 10 V
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
T
A
=−25°C
T
A
=−25°C
NSTB1002DXV5T1G, NSTB1002DXV5T5G
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6
PACKAGE DIMENSIONS
SOT−553
XV5 SUFFIX
CASE 463B−01
ISSUE B
e
M
0.08 (0.003) X
b 5 PL
A
c
−X−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
D
E
Y
12 3
45
L
1.35
0.0531
0.5
0.0197
ǒ
mm
inches
Ǔ
SCALE 20:1
0.5
0.0197
1.0
0.0394
0.45
0.0177
0.3
0.0118
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.50 0.55 0.60 0.020
INCHES
b 0.17 0.22 0.27 0.007
c
D 1.50 1.60 1.70 0.059
E 1.10 1.20 1.30 0.043
e 0.50 BSC
L 0.10 0.20 0.30 0.004
0.022 0.024
0.009 0.011
0.063 0.067
0.047 0.051
0.008 0.012
NOM MAX
1.50 1.60 1.70 0.059 0.063 0.067
H
E
0.08 0.13 0.18
0.003 0.005 0.007
0.020 BSC
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NSTB1002DXV5/D
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NSTB1002DXV5T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Lifecycle:
New from this manufacturer.
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