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NGTG50N60FLWG

P1-P3P4-P6P7-P9
© Semiconductor Components Industries, LLC, 2012
November, 2012 − Rev. 0
1 Publication Order Number:
NGTG50N60FLW/D
NGTG50N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for High Speed Switching
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Power Factor Correction
• Solar Inverters
• Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
600 V
Collector current
@ TC = 25°C
@ TC = 100°C
I
C
100
50
A
Pulsed collector current, T
pulse
limited by T
Jmax
I
CM
200 A
Short−circuit withstand time
V
GE
= 15 V, V
CE
= 400 V,
T
J
≤ +150°C
t
SC
5
ms
Gate−emitter voltage V
GE
$20 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
P
D
223
89
W
Operating junction temperature
range
T
J
−55 to +150 °C
Storage temperature range T
stg
−55 to +150 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−247
CASE 340L
STYLE 4
C
G
50 A, 600 V
V
CEsat
= 1.65 V
E
Device Package Shipping
ORDERING INFORMATION
NGTG50N60FLWG TO−247
(Pb−Free)
30 Units / Rail
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
G50N60FL
AYWWG
G
E
C
NGTG50N60FLWG
http://onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT
R
q
JC
0.56 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
600 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 25 A, T
J
= 150°C
V
CEsat
1.40
−
1.65
1.85
1.90
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 350 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
J
=
150°C
I
CES
−
−
−
−
0.5
2
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V , V
CE
= 0 V I
GES
− − 200 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 7302 −
pF
Output capacitance C
oes
− 220 −
Reverse transfer capacitance C
res
− 190 −
Gate charge total
V
CE
= 480 V, I
C
= 50 A, V
GE
= 15 V
Q
g
− 310 −
nC
Gate to emitter charge Q
ge
− 60 −
Gate to collector charge Q
gc
− 150 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
T
J
= 25°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10 W
V
GE
= 0 V/ 15 V*
t
d(on)
− 116 −
ns
Rise time t
r
− 43 −
Turn−off delay time t
d(off)
− 292 −
Fall time t
f
− 78 −
Turn−on switching loss E
on
− 1.1 −
mJ
Turn−off switching loss E
off
− 0.6 −
Total switching loss E
ts
− 1.7 −
Turn−on delay time
T
J
= 150°C
V
CC
= 400 V, I
C
= 50 A
R
g
= 10 W
V
GE
= 0 V/ 15 V*
t
d(on)
− 110 −
ns
Rise time t
r
− 45 −
Turn−off delay time t
d(off)
− 300 −
Fall time t
f
− 105 −
Turn−on switching loss E
on
− 1.4 −
mJ
Turn−off switching loss E
off
− 1.1 −
Total switching loss E
ts
− 2.5 −
*Includes diode reverse recovery loss using NGTB50N60FLWG.
NGTG50N60FLWG
http://onsemi.com
3
TYPICAL CHARACTERISTICS
250
200
150
100
50
0
01 2 34 8765
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 1. Output Characteristics
300
01 2 34 8765
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 2. Output Characteristics
250
200
150
100
50
0
V
GE
= 17 V to 13 V
11 V
10 V
9 V
8 V
7 V
T
J
= 25°C
T
J
= 150°C
V
GE
= 17 V to 13 V
11 V
10 V
9 V
8 V
7 V
250
200
150
100
50
0
01 2 34 8765
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 3. Output Characteristics
T
J
= −55°C
V
GE
= 17 V to 13 V
11 V
10 V
9 V
8 V
7 V
200
048 1612
V
GE
, GATE−EMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 4. Typical Transfer Characteristics
180
160
140
120
100
80
60
40
20
0
T
J
= 25°C
T
J
= 150°C
3.00
−75 −25 25 17512575
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR−EMITTER
VOLTAGE (V)
Figure 5. V
CE(sat)
vs. T
J
2.50
2.00
1.50
1.00
0.50
0.00
I
C
= 100 A
I
C
= 50 A
I
C
= 25 A
I
C
= 5 A
100000
0 10 20 10090
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
CAPACITANCE (pF)
Figure 6. Typical Capacitance
10000
1000
100
10
8030 40 706050
C
ies
C
oes
C
res
P1-P3P4-P6P7-P9

NGTG50N60FLWG

Mfr. #:
Buy NGTG50N60FLWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 600V/50A IGBT LPT TO-247
Lifecycle:
New from this manufacturer.
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