NGTG50N60FLWG

NGTG50N60FLWG
http://onsemi.com
4
TYPICAL CHARACTERISTICS
20
0
Q
G
, GATE CHARGE (nC)
V
GE
, GATEEMITTER VOLTAGE (V)
Figure 7. Typical Gate Charge
50 100 150 200 250 300 350
15
10
5
0
V
CE
= 480 V
1.6
0
T
J
, JUNCTION TEMPERATURE (°C)
SWITCHING LOSS (mJ)
Figure 8. Switching Loss vs. Temperature
20 40 60 100 120 140 160
1.4
1.2
1
0.8
0.6
0.4
0.2
0
80
E
on
E
off
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
R
g
= 10 W
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
R
g
= 10 W
1000
0
T
J
, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ns)
Figure 9. Switching Time vs. Temperature
20 40 60 100 120 140 16080
100
10
1
t
d(off)
t
d(on)
t
f
t
r
4.5
8
I
C
, COLLECTOR CURRENT (A)
SWITCHING LOSS (mJ)
Figure 10. Switching Loss vs. I
C
20 32 44 68 80 92 10456
4
3.5
3
2.5
2
1.5
1
0.5
0
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
R
g
= 10 W
E
on
E
off
8 203244 68809210456
1000
I
C
, COLLECTOR CURRENT (A)
SWITCHING TIME (ns)
Figure 11. Switching Time vs. I
C
100
10
1
t
d(off)
t
d(on)
t
f
t
r
V
CE
= 400 V
V
GE
= 15 V
T
J
= 150°C
R
g
= 10 W
NGTG50N60FLWG
http://onsemi.com
5
TYPICAL CHARACTERISTICS
7
5
R
G
, GATE RESISTOR (W)
SWITCHING LOSS (mJ)
Figure 12. Switching Loss vs. R
G
15 25 35 55 65 75 8545
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
T
J
= 150°C
E
on
E
off
6
5
4
3
2
1
0
10000
5
R
G
, GATE RESISTOR (W)
SWITCHING TIME (ns)
Figure 13. Switching Time vs. R
G
15 25 35 55 65 75 8545
1000
100
10
1
t
d(off)
t
d(on)
t
f
t
r
V
CE
= 400 V
V
GE
= 15 V
I
C
= 50 A
T
J
= 150°C
3
175
V
CE
, COLLECTOREMITTER VOLTAGE (V)
SWITCHING LOSS (mJ)
Figure 14. Switching Loss vs. V
CE
225 275 325 425 475 525 575375
2.4
1.8
1.2
0.6
0
E
on
E
off
V
GE
= 15 V
I
C
= 50 A
R
g
= 10 W
T
J
= 150°C
1000
175
V
CE
, COLLECTOREMITTER VOLTAGE (V)
SWITCHING TIME (ns)
Figure 15. Switching Time vs. V
CE
225 275 325 425 475 525 575375
100
10
1
V
GE
= 15 V
I
C
= 50 A
R
g
= 10 W
T
J
= 150°C
t
d(off)
t
d(on)
t
f
t
r
1000
1
V
CE
, COLLECTOREMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
Figure 16. Safe Operating Area
10 100 1000
100
10
1
0.1
0.01
50 ms
100 ms
1 ms
dc operation
Single Nonrepetitive
Pulse T
C
= 25°C
Curves must be derated
linearly with increase
in temperature
Figure 17. Reverse Bias Safe Operating Area
V
CE
, COLLECTOREMITTER VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
1000100101
1
10
100
1000
V
GE
= 15 V, T
C
= 125°C
NGTG50N60FLWG
http://onsemi.com
6
TYPICAL CHARACTERISTICS
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
R
q
JC
= 0.56
Junction
Case
C
1
C
2
R
1
R
2
R
n
C
i
= t
i
/R
i
Duty Factor = t
1
/t
2
Peak T
J
= P
DM
x Z
q
JC
+ T
C
C
n
t
i
(sec)
1.0E4
5.48E5
0.002
0.03
0.1
R
i
(°C/W)
0.02087
0.05041
0.07919
0.11425
0.19393
Figure 18. IGBT Transient Thermal Impedance
R(t) (°C/W)
PULSE TIME (sec)
0.001
0.01
0.1
1
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
2.00.09951
Figure 19. Test Circuit for Switching Characteristics

NGTG50N60FLWG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 600V/50A IGBT LPT TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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