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74ABT652
Absolute Maximum Ratings(Note 2)
Recommended Operating
Conditions
Note 2: Absolute maximum ratings are values beyond which the device
may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 3: Either voltage limit or current limit is sufficient to protect inputs.
DC Electrical Characteristics
Note 4: Guaranteed but not tested.
Note 5: For 8 outputs toggling, I
CCD
< 1.4 mA/MHz.
Note 6: Guaranteed, but not tested.
Storage Temperature −65°C to +150°C
Ambient Temperature under Bias −55°C to +125°C
Junction Temperature under Bias −55°C to +150°C
V
CC
Pin Potential to Ground Pin −0.5V to +7.0V
Input Voltage (Note 3) −0.5V to +7.0V
Input Current (Note 3) −30 mA to +5.0 mA
Voltage Applied to Any Output
in the Disable
or Power-Off State −0.5V to +5.5V
in the HIGH State −0.5V to V
CC
Current Applied to Output
in LOW State (Max) twice the rated I
OL
(mA)
DC Latchup Source Current −500 mA
Over Voltage Latchup (I/O) 10V
Free Air Ambient Temperature −40°C to +85°C
Supply Voltage +4.5V to +5.5V
Minimum Input Edge Rate (∆V/∆t)
Data Input 50 mV/ns
Enable Input 20 mV/ns
Clock Input 100 mV/ns
Symbol Parameter Min Typ Max Units
V
CC
Conditions
V
IH
Input HIGH Voltage 2.0 V
Recognized HIGH Signal
V
IL
Input LOW Voltage 0.8 V
Recognized LOW Signal
V
CD
Input Clamp Diode Voltage −1.2 V Min
I
IN
= −18 mA (Non I/O Pins)
V
OH
Output HIGH 2.5
V Min
I
OH
= −3 mA, (A
n
, B
n
)
Voltage 2.0
I
OH
= −32 mA, (A
n
, B
n
)
V
OL
Output LOW Voltage 0.55
V Min
I
OL
= 64 mA, (A
n
, B
n
)
V
ID
Input Leakage Test 4.75
V 0.0
I
ID
= 1.9 µA, (Non-I/O Pins)
All Other Pins Grounded
I
IH
Input HIGH Current
1 µA Max
V
IN
= 2.7V (Non-I/O Pins) (Note 4)
1
V
IN
= V
CC
(Non-I/O Pins)
I
BVI
Input HIGH Current Breakdown Test
7 µA Max
V
IN
= 7.0V (Non-I/O Pins)
I
BVIT
Input HIGH Current Breakdown Test (I/O)
100 µA Max
V
IN
= 5.5V (A
n
, B
n
)
I
IL
Input LOW Current
−1 µA Max
V
IN
= 0.5V (Non-I/O Pins) (Note 4)
−1
V
IN
= 0.0V (Non-I/O Pins)
I
IH
+
I
OZH
Output Leakage Current
10 µA 0V–5.5V
V
OUT
= 2.7V (A
n
, B
n
);
OEBA = 2.0V and OEAB = GND = 2.0V
I
IL
+ I
OZL
Output Leakage Current
−10 µA 0V–5.5V
V
OUT
= 0.5V (A
n
, B
n
);
OEBA = 2.0V and OEAB = GND = 2.0V
I
OS
Output Short-Circuit Current −100 −275 mA Max
V
OUT
= 0V (A
n
, B
n
)
I
CEX
Output HIGH Leakage Current 50 µA Max
V
OUT
= V
CC
(A
n
, B
n
)
I
ZZ
Bus Drainage Test 100 µA 0.0V
V
OUT
= 5.5V (A
n
, B
n
); All Others GND
I
CCH
Power Supply Current 250 µA Max
All Outputs HIGH
I
CCL
Power Supply Current 30 mA Max
All Outputs LOW
I
CCZ
Power Supply Current
50 µA Max
Outputs 3-STATE;
All others at V
CC
or GND
I
CCT
Additional I
CC
/Input
2.5 mA Max
V
I
= V
CC
− 2.1V
All others at V
CC
or GND
I
CCD
Dynamic I
CC
No Load 0.18 mA/MHz Max
Outputs Open (Note 5)
(Note 6)
OEAB = OEBA = GND
One bit toggling, 50% duty cycle
