NXP Semiconductors
PMZB550UNE
30 V, N-channel Trench MOSFET
PMZB550UNE All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet 25 March 2015 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 30 V
V
GS
gate-source voltage
T
j
= 25 °C
-8 8 V
V
GS
= 4.5 V; T
amb
= 25 °C [1] - 590 mAI
D
drain current
V
GS
= 4.5 V; T
amb
= 100 °C [1] - 370 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 2.3 A
[2] - 310 mWT
amb
= 25 °C
[1] - 400 mW
P
tot
total power dissipation
T
sp
= 25 °C - 1670 mW
T
j
junction temperature -55 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
Source-drain diode
I
S
source current T
amb
= 25 °C [1] - 380 mA
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm
2
.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
T
j
(°C)
- 75 17512525 75- 25
017aaa123
40
80
120
P
der
(%)
0
Fig. 2. Normalized total power dissipation as a
function of junction temperature
T
j
(°C)
- 75 17512525 75- 25
017aaa124
40
80
120
I
der
(%)
0
Fig. 3. Normalized continuous drain current as a
function of junction temperature
