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VND830MSP-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P28
VND830MSP-E Electrical specifications
Doc ID 10903 Rev 4 7/28
2.2 Thermal data
E
MAX
Maximum switching energy
(L = 0.18 mH; R
L
=0Ω; V
bat
=13.5V;
T
jstart
= 150 °C; I
L
=9A)
100 mJ
P
tot
Power dissipation at T
c
= 25 °C 73.5 W
T
j
Junction operating temperature Internally limited °C
T
c
Case operating temperature -40 to 150 °C
T
STG
Storage temperature -55 to 150 °C
Table 3. Absolute maximum ratings (continued)
Symbol Parameter Value Unit
Table 4. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 1.7 °C/W
R
thj-amb
Thermal resistance junction-ambient 51.7
(1)
1. When mounted on a standard single sided FR-4 board with 0.5 cm
2
of Cu (at least 35 µm thick). Horizontal
mounting and no artificial air flow.
37
(2)
2. When mounted on a standard single sided FR-4 board with 6 cm
2
of Cu (at least 35 µm thick). Horizontal
mounting and no artificial air flow.
°C/W
Electrical specifications VND830MSP-E
8/28 Doc ID 10903 Rev 4
2.3 Electrical characteristics
Values specified in this section are for 8 V < V
CC
< 36 V;
-40 °C < T
j
< 150 °C, unless
otherwise specified. (Per each channel).
Table 5. Power output
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
CC
(1)
1. Per device.
Operating supply voltage 5.5 13 36 V
V
USD
(1)
Undervoltage shutdown 3 4 5.5 V
V
OV
(1)
Overvoltage shutdown 36 V
R
ON
On-state resistance
I
OUT
= 2 A; T
j
=25°C 60 mΩ
I
OUT
= 2 A; V
CC >
8V 120 mΩ
I
S
(1)
Supply current
Off-state; V
CC
=13V;
V
IN
=V
OUT
=0V
12 40 µA
Off-state; V
CC
=13V;
V
IN
=V
OUT
=0V; T
j
=25°C
12 25 µA
On-state; V
CC
=13V; V
IN
=5V;
I
OUT
=0A
57mA
I
L(off1)
Off-state output current V
IN
=V
OUT
=0V 0 50 µA
I
L(off2)
Off-state output current V
IN
=0V; V
OUT
=3.5V -75 0 µA
I
L(off3)
Off-state output current
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=125°C
5µA
I
L(off4)
Off-state output current
V
IN
=V
OUT
=0V; V
CC
=13V;
T
j
=25°C
3µA
Table 6. Switching (V
CC
=13V)
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
Turn-on delay time
R
L
=6.5Ω from V
IN
rising edge
to V
OUT
=1.3V
53060µs
t
d(off)
Turn-on delay time
R
L
=6.5Ω from V
IN
falling
edge to V
OUT
=11.7V
10 30 70 µs
(dV
OUT
/dt)
on
Turn-on voltage slope
R
L
=6.5Ω from V
OUT
=1.3V
to V
OUT
= 10.4 V
0.15
See
Figure 21
1.5 V/µs
(dV
OUT
/dt)
off
Turn-off voltage slope
R
L
=6.5Ω from V
OUT
=11.7V
to V
OUT
=1.3V
0.1
See
Figure 22
0.75 V/µs
Table 7. Logic input
Symbol Parameter Test conditions Min Typ Max Unit
V
IL
Input low level 1.25 V
I
IL
Low level input current V
IN
=1.25V 1 µA
VND830MSP-E Electrical specifications
Doc ID 10903 Rev 4 9/28
V
IH
Input high level 3.25 V
I
IH
High level input current V
IN
=3.25V 10 µA
V
I(hyst)
Input hysteresis voltage 0.5 V
V
ICL
Input clamp voltage
I
IN
=1mA 6 6.88V
I
IN
=-1mA -0.7 V
Table 8. V
CC
- output diode
Symbol Parameter Test conditions Min Typ Max Unit
V
F
Forward on voltage -I
OUT
= 1.3 A; T
j
= 150 °C - - 0.6 V
Table 9. Status pin
Symbol Parameter Test conditions Min Typ Max Unit
V
STAT
Status low output voltage I
STAT
= 1.6 mA 0.5 V
I
LSTAT
Status leakage current Normal operation; V
STAT
= 5 V 10 mA
C
STAT
Status pin input
capacitance
Normal operation; V
STAT
= 5 V 100 pF
V
SCL
Status clamp voltage
I
STAT
= 1 mA 6 6.8 8 V
I
STAT
= -1 mA -0.7 V
Table 10. Protection
(1)
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
TSD
Shutdown temperature 150 175 200 °C
T
R
Reset temperature 135 °C
T
hyst
Thermal hysteresis 7 15 °C
t
SDL
Status delay in overload
conditions
T
j
> T
TSD
20 µs
I
lim
Current limitation
V
CC
=13V 6 9 15 A
5.5 V < V
CC
<36V 15 A
V
demag
Turn-off output clamp
voltage
I
OUT
=2A; L=6mH V
CC
-41 V
CC
-48 V
CC
-55 V
Table 7. Logic input (continued)
Symbol Parameter Test conditions Min Typ Max Unit
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VND830MSP-E

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Manufacturer:
STMicroelectronics
Description:
Gate Drivers Double Ch High Side
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