BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 7 December 2010 3 of 13
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
5. Limiting values
[1] t
p
=100μs; square wave; T
j
=25°C prior to surge.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[3] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
I
F
forward current - 250 mA
I
ZSM
non-repetitive peak
reverse current
- see
Table 8
, 9
and 10
P
ZSM
non-repetitive peak
reverse power dissipation
[1]
-40W
P
tot
total power dissipation T
amb
≤ 25 °C
[2]
- 375 mW
[3]
- 830 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--330K/W
[2]
--150K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[3]
--70K/W
