BZT52H_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 7 December 2010 6 of 13
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
[1] f = 1 MHz; V
R
=0V.
[2] t
p
= 100 μs; T
amb
=25°C.
[1] f = 1 MHz; V
R
=0V.
[2] t
p
= 100 μs; T
amb
=25°C.
Table 9. Characteristics per type; BZT52H-B27 to BZT52H-C51
T
j
=25
°
C unless otherwise specified.
BZT52H
-xxx
Sel Working
voltage
V
Z
(V);
I
Z
=2mA
Maximum differential
resistance r
dif
(Ω)
Reverse
current I
R
(μA)
Temperature
coefficient
S
Z
(mV/K);
I
Z
=5mA
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Min Max I
Z
=1mA I
Z
=5mA Max V
R
(V) Min Max Max Max
27 B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 50 1.0
C 25.1 28.9
30 B 29.4 30.6 250 40 0.05 21 24.4 29.4 50 1.0
C 28.0 32.0
33 B 32.3 33.7 250 40 0.05 23.1 27.4 33.4 45 0.9
C 31.0 35.0
36 B 35.3 36.7 250 60 0.05 25.2 30.4 37.4 45 0.8
C 34.0 38.0
39 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 45 0.7
C 37.0 41.0
43 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 40 0.6
C 40.0 46.0
47 B 46.1 47.9 325 90 0.05 32.9 42.0 51.8 40 0.5
C 44.0 50.0
51 B 50.0 52.0 350 100 0.05 35.7 46.6 57.2 40 0.4
C 48.0 54.0
Table 10. Characteristics per type; BZT52H-B56 to BZT52H-C75
T
j
=25
°
C unless otherwise specified.
BZT52H
-xxx
Sel Working
voltage
V
Z
(V);
I
Z
=2mA
Maximum differential
resistance r
dif
(Ω)
Reverse
current I
R
(μA)
Temperature
coefficient
S
Z
(mV/K);
I
Z
=5mA
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Min Max I
Z
=0.5mA I
Z
=2mA Max V
R
(V) Min Max Max Max
56 B 54.9 57.1 375 120 0.05 39.2 52.2 63.8 40 0.3
C 52.0 60.0
62 B 60.8 63.2 400 140 0.05 43.4 58.8 71.6 35 0.3
C 58.0 66.0
68 B 66.6 69.4 400 160 0.05 47.6 65.6 79.8 35 0.25
C 64.0 72.0
75 B 73.5 76.5 400 175 0.05 52.5 73.4 88.6 35 0.20
C 70.0 79.0
