1/9June 2003
■ HIGH SPEED:
t
PD
= 0.3ns (TYP.) at V
CC
=5V
t
PD
= 0.4ns (TYP.) at V
CC
=3.3V
■ LOW POWER DISSIPATION:
I
CC
=1µA(MAX.) at T
A
= 25°C
■ LOW "ON" RESISTANCE:
R
ON
=6.5Ω (TYP.) AT V
CC
=5VI
I/O
=1mA
R
ON
=8.5Ω(TYP.) AT V
CC
=3.3VI
I/O
=1mA
■ SINE WAVE DISTORTION:
0.04% AT V
CC
=3.3Vf=1KHz
■ WIDE OPERATING RANGE:
V
CC
(OPR) = 2V TO 5.5V
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2G66 is an advanced high-speed CMOS
DUAL BILATERAL SWITCH fabricated in silicon
gate C
2
MOS technology. It achieves high speed
propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This bilateral switch handles
rail to rail analog and digital signals that may vary
across the full power supply range (from GND to
V
CC
).
The C input is provided to control the switch and
it’s compatible with standard CMOS output; the
switch is ON (port I/O is connected to Port O/I)
when the C input is held high and OFF (high
impedance state exists between the two ports)
when C is held low. It can be used in many
application as Battery Powered System, Test
Equipment. It’s available in the commercial and
extended temperature range in SOT23-8L
package. All inputs and output are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
74V2G66
DUAL BILATERAL SWITCH
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2G66STR
SOT23-8L
