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74V2G66STR
P1-P3
P4-P6
P7-P9
74V2G66
4/9
CAPACITIVE
CH
ARACTERIS
TICS
1) C
PD
is def
ined as th
e v
a
lue of the IC’s
inter
nal eq
uivalen
t
c
apac
i
tan
ce whic
h
is
cal
culate
d
f
rom the ope
rating cur
rent con
sum
ption
w
ithou
t
load
. (Ref
er to
Te
st Ci
rcuit)
. Ave
rage
op
eratin
g cu
rrent
ca
n be o
btaine
d by
the
fol
lowi
ng equ
ati
on. I
CC(opr)
=C
PD
xV
CC
xf
IN
+I
CC
/4
ANALOG SWITCH
CHARACTERISTICS
(GND = 0V;
T
A
= 25°C)
(*)
V
o
ltage
rang
e i
s 3.3V
±
0.3V
(
**
)
Vol
t
ag
e
ran
ge is
5.
0V
±
0.
5V
Symb
ol
Parameter
T
est C
ondition
V
al
ue
Unit
V
CC
(V)
T
A
= 25°C
-40 to
85°C
-
55 to
125°
C
Min.
T
yp.
Max.
Mi
n.
Max.
M
in.
M
ax.
C
IN
Input C
apacitance
31
0
1
0
1
0
p
F
C
I/O
Output
Capacitance
10
pF
C
PD
Power
Dissipati
on
Capacitance
(note 1
)
3.3
2.5
pF
5.0
3
Symbol
Param
eter
T
est Co
ndition
Value
Unit
V
CC
(V)
V
IN
(V
p-
p
)
Ty
p
.
Sine Wave
Distor
tion (T
HD)
3.3
(*)
2.75
f
IN
=1K
H
z
R
L
=1
0K
Ω
,C
L
=5
0p
F
0.04
%
5.0
(**)
4
0.04
f
MA
X
Frequ
ency
Respo
nse
(Switc
h ON
)
3.3
(*)
Adjust
f
IN
voltage to o
btain 0 dBm
at V
OS
.
Increase
f
IN
Frequen
cy until dB
meter read
s -3dB
R
L
=5
0
Ω
,C
L
=1
0p
F
150
MHz
5.0
(**)
180
Feed
through
Attenu
ation
(Switc
h OFF
)
3.3
(*)
V
IN
is center
ed at V
CC
/2
Adjus
t f
IN
V
o
lt
a
ge to obtained 0dB
m at V
IS
R
L
= 600
Ω
,C
L
=5
0p
F
,f
IN
= 1KH
z sine wav
e
-60
dB
5.0
(**)
-60
Cross
talk (Con
trol
Input
to Signal
Outpu
t)
3.3
(*)
R
L
= 600
Ω
,C
L
=5
0p
F
,f
IN
= 1KHz
square wa
ve
t
r
=t
f
=6
n
s
60
mV
5.0
(**)
60
74V2G66
5/9
SWITCHING
CARACTERISTICS
TEST
CI
RC
UI
T
FEEDTHRO
UGH
A
T
TENUA
TI
ON
CROSSTALK
(contro
l to output
BANDWID
TH A
TTE
NUA
TION
MAXIMUM
CON
TROL FRE
QUENCY
74V2G66
6/9
CHANNE
L
RESISTANCE (
R
ON)
I
CC
(Opr.)
P1-P3
P4-P6
P7-P9
74V2G66STR
Mfr. #:
Buy 74V2G66STR
Manufacturer:
STMicroelectronics
Description:
Analog Switch ICs Dual Bilateral Sw
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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74V2G66STR