74HC_HCT1G125_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 18 June 2013 6 of 16
NXP Semiconductors
74HC1G125-Q100; 74HCT1G125-Q100
Bus buffer/line driver; 3-state
[1] All typical values are measured at T
amb
= 25 C.
Table 8. Static characteristics 74HCT1G125-Q100
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= 40 C to +85 C
[1]
V
IH
HIGH-level input voltage V
CC
= 4.5 V to 5.5 V 2.0 1.6 - V
V
IL
LOW-level input voltage V
CC
= 4.5 V to 5.5 V - 1.2 0.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A4.44.5-V
I
O
= 6.0 mA 3.84 4.32 - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A-00.1V
I
O
= 6.0 mA - 0.16 0.33 V
I
I
input leakage current V
I
= V
CC
or GND; V
CC
= 5.5 V - - 1.0 A
I
OZ
OFF-state output current V
I
= V
IH
or V
IL
; V
O
= V
CC
or GND;
V
CC
= 5.5 V
--5A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--10A
I
CC
additional supply current V
I
= V
CC
2.1 V; I
O
=0A;
V
CC
= 4.5 V to 5.5 V
- - 500 A
C
I
input capacitance - 1.5 - pF
T
amb
= 40 C to +125 C
V
IH
HIGH-level input voltage V
CC
= 4.5 V to 5.5 V 2.0 - - V
V
IL
LOW-level input voltage V
CC
= 4.5 V to 5.5 V - - 0.8 V
V
OH
HIGH-level output voltage V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A4.4--V
I
O
= 6.0 mA 3.7 - - V
V
OL
LOW-level output voltage V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A--0.1V
I
O
= 6.0 mA - - 0.4 V
I
I
input leakage current V
I
= V
CC
or GND; V
CC
= 5.5 V - - 1.0 A
I
OZ
OFF-state output current V
I
= V
IH
or V
IL
; V
O
= V
CC
or GND;
V
CC
= 5.5 V
--10A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--20A
I
CC
additional supply current V
I
= V
CC
2.1 V; I
O
=0A;
V
CC
= 4.5 V to 5.5 V
- - 850 A
74HC_HCT1G125_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 18 June 2013 7 of 16
NXP Semiconductors
74HC1G125-Q100; 74HCT1G125-Q100
Bus buffer/line driver; 3-state
11. Dynamic characteristics
[1] All typical values are measured at T
amb
= 25 C.
[2] t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
Table 9. Dynamic characteristics 74HC1G125-Q100
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 7
Symbol Parameter Conditions Min Typ Max Unit
T
amb
= 40 C to +85 C
[1]
t
pd
propagation delay A to Y; see Figure 5
[2]
V
CC
= 2.0 V - 24 125 ns
V
CC
= 4.5 V - 10 25 ns
V
CC
=5V; C
L
=15pF - 9 - ns
V
CC
= 6.0 V - 8 21 ns
t
en
enable time OE to Y; see Figure 6
[2]
V
CC
= 2.0 V - 19 155 ns
V
CC
= 4.5 V - 9 31 ns
V
CC
= 6.0 V - 7 26 ns
t
dis
disable time OE to Y; see Figure 6
[2]
V
CC
= 2.0 V - 18 155 ns
V
CC
= 4.5 V - 12 31 ns
V
CC
= 6.0 V - 11 26 ns
C
PD
power dissipation capacitance V
I
= GND to V
CC
[3]
-30-pF
T
amb
= 40 C to +125 C
t
pd
propagation delay A to Y; see Figure 5
[2]
V
CC
= 2.0 V - - 150 ns
V
CC
= 4.5 V - - 30 ns
V
CC
= 6.0 V - - 26 ns
t
en
enable time OE to Y; see Figure 6
[2]
V
CC
= 2.0 V - - 190 ns
V
CC
= 4.5 V - - 38 ns
V
CC
= 6.0 V - - 32 ns
t
dis
disable time OE to Y; see Figure 6
[2]
V
CC
= 2.0 V - - 190 ns
V
CC
= 4.5 V - - 38 ns
V
CC
= 6.0 V - - 32 ns
74HC_HCT1G125_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 18 June 2013 8 of 16
NXP Semiconductors
74HC1G125-Q100; 74HCT1G125-Q100
Bus buffer/line driver; 3-state
[1] All typical values are measured at T
amb
= 25 C.
[2] t
pd
is the same as t
PLH
and t
PHL
.
t
en
is the same as t
PZL
and t
PZH
.
t
dis
is the same as t
PLZ
and t
PHZ
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W).
P
D
=C
PD
V
CC
2
f
i
N+(C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of the outputs.
Table 10. Dynamic characteristics 74HCT1G125-Q100
Voltages are referenced to GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit see Figure 7
Symbol Parameter Conditions Min Typ
[1]
Max Unit
T
amb
= 40 C to +85 C
t
pd
propagation delay A to Y; see Figure 5
[2]
V
CC
=4.5V - 11 30 ns
V
CC
=5V; C
L
=15pF - 10 - ns
t
en
enable time V
CC
= 4.5 V; OE to Y;
see Figure 6
[2]
-1035ns
t
dis
disable time V
CC
= 4.5 V; OE to Y;
see Figure 6
[2]
-1131ns
C
PD
power dissipation capacitance V
I
= GND to V
CC
1.5 V
[3]
-27-pF
T
amb
= 40 C to +125 C
t
pd
propagation delay V
CC
= 4.5 V; A to Y; see Figure 5
[2]
--36ns
t
en
enable time V
CC
= 4.5 V; OE to Y;
see Figure 6
[2]
--42ns
t
dis
disable time V
CC
= 4.5 V; OE to Y;
see Figure 6
[2]
--38ns

74HCT1G125GW-Q100H

Mfr. #:
Manufacturer:
Nexperia
Description:
Buffers & Line Drivers 74HCT1G125GW-Q100/UMT5/REEL 7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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