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MT36JSF1G72PZ-1G6M1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
I
DD
Specifications
Table 13: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision M)
Values are for the MT41J512M DDR3 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) com-
ponent data sheet
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
1566 1476 1386 1296 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
1
1746 1656 1566 1476 mA
Precharge power-down current: Slow exit I
DD2P0
2
432 432 432 432 mA
Precharge power-down current: Fast exit I
DD2P1
2
1512 1332 1152 972 mA
Precharge quiet standby current I
DD2Q
2
1620 1440 1260 1080 mA
Precharge standby current I
DD2N
2
1728 1548 1368 1188 mA
Precharge standby ODT current I
DD2NT
2
1116 1026 936 846 mA
Active power-down current I
DD3P
2
1980 1800 1620 1440 mA
Active standby current I
DD3N
2
2160 1980 1800 1620 mA
Burst read operating current I
DD4R
1
3024 2754 2484 2286 mA
Burst write operating current I
DD4W
1
2826 2556 2286 2016 mA
Refresh current I
DD5B
1
3816 3726 3636 3546 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
432 432 432 432 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
486 486 486 486 mA
All banks interleaved read current I
DD7
1
4806 4536 4266 3996 mA
Reset current I
DD8
1
468 468 468 468 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
8GB (x72, ECC, DR) 240-Pin DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef84705869
jsf36c1gx72pz.pdf - Rev. D 4/13 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Table 14: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision K)
Values are for the MT41J512M DDR3 SDRAM only and are computed from values specified in the 2Gb (512 Meg x 4) com-
ponent data sheet
Parameter Symbol 1866 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
990 972 954 918 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
1
1206 1152 1116 1044 mA
Precharge power-down current: Slow exit I
DD2P0
2
432 432 432 432 mA
Precharge power-down current: Fast exit I
DD2P1
2
540 540 540 540 mA
Precharge quiet standby current I
DD2Q
2
792 792 792 792 mA
Precharge standby current I
DD2N
2
828 828 828 828 mA
Precharge standby ODT current I
DD2NT
2
964 928 792 738 mA
Active power-down current I
DD3P
2
792 792 792 792 mA
Active standby current I
DD3N
2
1332 1260 1188 1116 mA
Burst read operating current I
DD4R
1
2124 1944 1728 1476 mA
Burst write operating current I
DD4W
1
2196 1998 1782 1566 mA
Refresh current I
DD5B
1
3528 3492 3474 3438 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
432 432 432 432 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
486 486 486 486 mA
All banks interleaved read current I
DD7
1
3294 3150 3042 2520 mA
Reset current I
DD8
1
468 468 468 468 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
8GB (x72, ECC, DR) 240-Pin DDR3 RDIMM
I
DD
Specifications
PDF: 09005aef84705869
jsf36c1gx72pz.pdf - Rev. D 4/13 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Registering Clock Driver Specifications
Table 15: Registering Clock Driver Electrical Characteristics
SSTE32882 devices or equivalent
Parameter Symbol Pins Min Nom Max Units
DC supply voltage V
DD
– 1.425 1.5 1.575 V
DC reference voltage V
REF
– 0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
DC termination
voltage
V
TT
– 0.49 × V
DD
- 20mV 0.5 × V
DD
0.51 × V
DD
+ 20mV V
AC high-level input
voltage
V
IH(AC)
Control, command,
address
V
REF
+ 175mV – V
DD
+ 400mV V
AC low-level input
voltage
V
IL(AC)
Control, command,
address
–0.4 – V
REF
- 175mV V
DC high-level input
voltage
V
IH(DC)
Control, command,
address
V
REF
+ 100mV – V
DD
+ 0.4 V
DC low-level input
voltage
V
IL(DC)
Control, command,
address
–0.4 – V
REF
- 100mV V
High-level input
voltage
V
IH(CMOS)
RESET#, MIRROR 0.65 × V
DD
– V
DD
V
Low-level input
voltage
V
IL(CMOS)
RESET#, MIRROR 0 – 0.35 × V
DD
V
Differential input
crosspoint voltage
range
V
IX(AC)
CK, CK#, FBIN, FBIN# 0.5 × V
DD
- 175mV 0.5 × V
DD
0.5 × V
DD
+ 175mV V
Differential input
voltage
V
ID(AC)
CK, CK# 350 – V
DD
+ TBD mV
High-level output
current
I
OH
Err_Out# – – TBD mA
Low-level output
current
I
OL
Err_Out# TBD – TBD mA
Note:
1. Timing and switching specifications for the register listed are critical for proper opera-
tion of the DDR3 SDRAM RDIMMs. These are meant to be a subset of the parameters for
the specific device used on the module.
8GB (x72, ECC, DR) 240-Pin DDR3 RDIMM
Registering Clock Driver Specifications
PDF: 09005aef84705869
jsf36c1gx72pz.pdf - Rev. D 4/13 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

MT36JSF1G72PZ-1G6M1

Mfr. #:
Buy MT36JSF1G72PZ-1G6M1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 8GB 240RDIMM
Lifecycle:
New from this manufacturer.
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