DMP21D0UFB-7 Datasheet DMP21D0UFB-7 | P1-P3

DMP21D0UFB

D

atasheet Number: DS35277 Rev. 3 - 2

1 of 7

www.diodes.com

February 2012

A

Product Line o

f

Diodes Incorporated

DMP21D0UFB

20V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(on)

Max

I

D

Max

@ T

A

= 25°C

(Note 4)

-20V

495mΩ @ V

GS

= -4.5V

-0.77A

690mΩ @ V

GS

= -2.5V

-0.67A

960mΩ @ V

GS

= -1.8V

-0.57A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(R

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Portable electronics

Features and Benefits

• Footprint of just 0.6mm

2

– thirteen times smaller than SOT23

• Low Gate Threshold Voltage

• Fast Switching Speed

• Totally Lead-Free & Fully RoHS compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• ESD Protected Gate 3KV

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X1-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP21D0UFB-7B NG 7 8 10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X1-DFN1006-3

Equivalent Circuit

Top View

Internal Schematic

Bottom View

Source

Gate

Protection

Diode

Gate

Drain

D

S

G

NG

NG = Product Type Marking Code

DMP21D0UFB-7B

Top View

Bar Denotes Gate

and Source Side

ESD PROTECTED TO 3kV

DMP21D0UFB

D

atasheet Number: DS35277 Rev. 3 - 2

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Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current

Steady

State

T

A

= 25°C (Note 4)

T

A

= 85°C (Note 4)

T

A

= 25°C (Note 5)

I

D

-0.77

-0.55

-1.17

A

Pulsed Drain Current (Note 6)

I

DM

-5.0 A

Thermal Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4)

P

D

0.43 W

Power Dissipation (Note 5)

P

D

0.99 W

Thermal Resistance, Junction to Ambient (Note 4)

R

θJA

293 °C/W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

126 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Thermal Characteristics

0

1

2

3

4

5

6

7

8

9

10

0.0001 0.001 0.01 0.1 1 10 100 1,000

t , PULSE DURATION TIME (SEC)

Fig. 1 Single Pulse Maximum Power Dissipation

1

Single Pulse

R = 120°C/W

R (t) = r(t) * R

T - T = P * R (t)

θ

θθ

θ

JA

JA JA

P(pk), PEAK TRANSIENT POWER (W)

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

Fig. 2 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.001

0.01

0.1

1

r(t),

T

R

ANSIEN

T

H

E

R

MAL

R

ESIS

T

AN

C

E

T - T = P * R (t)

Duty Cycle, D = t /t

JA JA

12

θ

R (t) = r(t) *

θ

JA

R

R = 120°C/W

θ

JA

P(pk)

t

1

t

2

D = 0.7

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

DMP21D0UFB

D

atasheet Number: DS35277 Rev. 3 - 2

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Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BV

DSS

20 - - V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current T

J

= 25°C I

DSS

- - -1

μA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- - ±10

μA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

V

GS

(

th

)

- -0.7 - V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

- -

495

mΩ

V

GS

= -4.5V, I

D

= -400mA

690

V

GS

= -2.5V, I

D

= -300mA

960

V

GS

= -1.8V, I

D

= -100mA

Forward Transfer Admittance

|Y

fs

|

50 - - mS

V

DS

= -3V, I

D

= -300mA

Diode Forward Voltage

V

SD

- - -1.2 V

V

GS

= 0V, I

S

= -300mA

DYNAMIC CHARACTERISTICS

Input Capacitance

C

iss

- 76.5 - pF

V

DS

= -10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 13.7 - pF

Reverse Transfer Capacitance

C

rss

- 10.7 - pF

Gate Resistance

R

g

- 195 - Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

1.5 - nC

V

GS

= -8V, V

DS

= -15V, I

D

= -1A

Total Gate Charge

Q

g

- 1.0 - nC

V

GS

= -4.5V, V

DS

= -15V,

I

D

= -1A

Gate-Source Charge

Q

g

s

- 0.2 - nC

Gate-Drain Charge

Q

g

d

- 0.3 - nC

Turn-On Delay Time

t

D

(

on

)

- 7.1 - ns

V

DS

= -10V, -I

D

= 1A

V

GS

= -4.5V, R

G

= 6Ω

Turn-On Rise Time

t

r

- 8.0 - ns

Turn-Off Delay Time

t

D

(

off

)

- 31.7 - ns

Turn-Off Fall Time

t

f

- 18.5 - ns

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

Typical Characteristics

0

0.5

1.0

1.5

2.0

01 2 3 45

Fig. 3 Typical Output Characteristic

-V , DRAIN-SOURCE VOLTAGE (V)

DS

-I , D

R

AIN

C

U

R

EN

T

(A)

D

V = -1.2V

GS

V = -1.5V

GS

V = -2.0V

GS

V = -2.5V

GS

V = -3.0V

GS

V = -4.5V

GS

V = -4.0V

GS

V = -1.8V

GS

0

0.5

1.0

1.5

2.0

0 0.5 1.0 1.5 2.0 2.5 3.0

-I , D

R

AI

N

C

U

R

E

N

T

(A)

D

Fig. 4 Typical Transfer Characteristic

-V , GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V = -5V

DS

DMP21D0UFB-7

DMP21D0UFB-7

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