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DMP21D0UFB-7

P1-P3P4-P6P7-P7
DMP21D0UFB
D
atasheet Number: DS35277 Rev. 3 - 2
4 of 7
www.diodes.com
February 2012
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMP21D0UFB
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0.4 0.8 1.2 1.6 2.0
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.4 0.8 1.2 1.6 2.0
-I , DRAIN CURRENT (A)
D
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 7 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
V = -2.5V
I = -250mA
GS
D
V = -5.0V
I = -500mA
GS
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DSON
Ω
Fig. 8 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = -5.0V
I = -500mA
GS
D
V = -2.5V
I = -250mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
-V ,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
1.4
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
I = -1mA
D
I = -250µA
D
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.4 0.6 0.8 1.0 1.2
-I , S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
T = 25°C
A
Fig. 10 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
DMP21D0UFB
D
atasheet Number: DS35277 Rev. 3 - 2
5 of 7
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February 2012
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Diodes Incorporated
DMP21D0UFB
1
10
100
1,000
10,000
04 8121620
-I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
02468
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.12 Leakage Current vs. Gate-Source Voltage
0.1
1
10
100
1,000
10,000
100,000
I , LEAKA
G
E
C
U
R
R
E
N
T
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
0.1
1
10
100
1,000
10,000
100,000
02468
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.13 Leakage Current vs. Gate-Source Voltage
I, LEAKA
G
E
C
U
R
R
E
N
T
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
1,000
100
10
1
0
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Junction Capacitance
DS
2 4 6 8 10 12 14 16 18 20
C
, J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0
1
2
3
4
5
6
7
8
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Q , TOTAL GATE CHARGE (nC)
Fig. 15 Gate-Charge Characteristics
g
-V ,
G
A
T
E-S
O
U
R
C
E V
O
L
T
A
G
E (V)
GS
DMP21D0UFB
D
atasheet Number: DS35277 Rev. 3 - 2
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February 2012
© Diodes Incorporated
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Diodes Incorporated
DMP21D0UFB
Package Outline Dimensions
Suggested Pad Layout
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e
⎯ ⎯
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
⎯ ⎯
0.40
All Dimensions in mm
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
L2
A1
E
b2
L1L3
D
e
b1
A
Y
C
G1
G2
X
X
1
Z
P1-P3P4-P6P7-P7

DMP21D0UFB-7

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Buy DMP21D0UFB-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET P-CH
Lifecycle:
New from this manufacturer.
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