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STB50NE10 Electrical ratings
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1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 100 V
V
DGR
Drain-gate voltage (R
GS
= 20 kΩ) 100 V
V
GS
Gate- source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25°C 50 A
I
D
Drain current (continuous) at T
C
= 100°C 35 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 200 A
P
tot
Total dissipation at T
C
= 25°C 180 W
Derating Factor 1.2 W/°C
dv/dt Peak diode recovery voltage slope 6 V/ns
T
stg
Storage temperature
-65 to 175 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max 0.83 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
Rthj-sink Thermal resistance case-sink max 0.5 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
50 A
E
AS
Single pulse avalanche energy
(starting Tj = 25 °C, I
D
= I
AR
, V
DD
= 50 V)
300 mJ
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