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STB50NE10T4

P1-P3P4-P6P7-P9P10-P12P13-P13
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Electrical characteristics STB50NE10
4/13
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 250µA, V
GS
=0 100 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
1
10
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 25A 0.021 0.027 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward
transconductance
V
DS
=V
DS
>I
D(on)
xR
DS(on)
max,
I
D
=20A
20 35 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
4350
500
175
6000 pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 50V, I
D
= 25A
R
G
=4.7Ω V
GS
= 10V
(see Figure 12)
25
100
45
35
ns
ns
ns
ns
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 80V, I
D
= 50A,
V
GS
= 10V, R
G
=4.7Ω
(see Figure 13)
123
24
47
166 nC
nC
nC
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STB50NE10 Electrical characteristics
5/13
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
50
200
A
A
V
SD
(2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage I
SD
= 50A, V
GS
= 0 1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 50A, di/dt = 100A/µs,
V
DD
= 30V, T
j
= 150°C
(see Figure 14)
155
815
10.5
ns
nC
A
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Electrical characteristics STB50NE10
6/13
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
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P1-P3P4-P6P7-P9P10-P12P13-P13

STB50NE10T4

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Buy STB50NE10T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 50 Amp
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