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STP24NF10

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics STB24NF10 - STP24NF10
4/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0
100 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
23 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 12A
0.055 0.060 Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
= 15V, I
D
= 12A
10 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
870
125
50
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 80V, I
D
= 24A
V
GS
=10V
(see Figure 7)
30
6
10
41 nC
nC
nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
=50V, I
D
= 12A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 12)
60
15
50
20
ns
ns
ns
ns
STB24NF10 - STP24NF10 Electrical characteristics
5/14
Table 6. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
I
SD
Source-drain current 26 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 104 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
= 24A, V
GS
=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 24A,
di/dt = 100A/µs,
V
DD
= 30V, Tj=150°C
(see Figure 14)
100
375
7.5
ns
nC
A
Electrical characteristics STB24NF10 - STP24NF10
6/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characterisics Figure 4. Transfer characteristics
Figure 5. Trasconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12P13-P14

STP24NF10

Mfr. #:
Buy STP24NF10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 24 Amp
Lifecycle:
New from this manufacturer.
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