BUZ32 H

P1-P3 P4-P6 P7-P9 P10-P10

Rev. 2.4 Page 1 2009-11-10

SIPMOS

®

Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1

Pin 2

Pin 3

G

D

S

Type

V

DS

I

D

R

DS(on)

Package

Pb-free

BUZ 32 H

200 V

9.5 A

0.4

Ω

PG-TO-220-3

Yes

Maximum Ratings

Parameter

Symbol

Values

Unit

Continuous drain current

T

C

= 29 ˚C

I

D

9.5

A

Pulsed drain current

T

C

= 25 ˚C

I

Dpuls

38

Avalanche current,limited by

T

jmax

I

AR

9.5

Avalanche energy,periodic limited by

T

jmax

E

AR

6.5

mJ

Avalanche energy, single pulse

I

D

= 9.5 A,

V

DD

= 50 V,

R

GS

= 25

Ω

L

= 2 mH,

T

j

= 25 ˚C

E

AS

120

Gate source voltage

V

GS

±

20

V

Power dissipation

T

C

= 25 ˚C

P

tot

75

W

Operating temperature

T

j

-55 ... + 150

˚C

Storage temperature

T

stg

-55 ... + 150

Thermal resistance, chip case

R

thJC

≤

1.67

K/W

Thermal resistance, chip to ambient

R

thJA

75

DIN humidity category, DIN 40 040

E

IEC climatic category, DIN IEC 68-1

55 / 150 / 56

BUZ 32 H

. Halogen-free according to IEC61249-2-21

BUZ 32 H

Rev. 2.4 Page 2 2009-11-10

Electrical Characteristics,

at

T

j

= 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS

= 0 V,

I

D

= 0.25 mA,

T

j

= 25 ˚C

V

(BR)DSS

200

-

-

V

Gate threshold voltage

V

GS

=

V

DS,

I

D

= 1 mA

V

GS(th)

2.1

3

4

Zero gate voltage drain current

V

DS

= 200 V,

V

GS

= 0 V,

T

j

= 25 ˚C

V

DS

= 200 V,

V

GS

= 0 V,

T

j

= 125 ˚C

I

DSS

-

-

10

0.1

100

1

µA

Gate-source leakage current

V

GS

= 20 V,

V

DS

= 0 V

I

GSS

-

10

100

nA

Drain-Source on-resistance

V

GS

= 10 V,

I

D

= 6 A

R

DS(on)

-

0.3

0.4

Ω

BUZ 32 H

Rev. 2.4 Page 3 2009-11-10

Electrical Characteristics,

at

T

j

= 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

Dynamic Characteristics

Transconductance

V

DS

≥

2

*

I

D *

R

DS(on)max,

I

D

= 6 A

g

fs

3

4.6 -

S

Input capacitance

V

GS

= 0 V,

V

DS

= 25 V,

f

= 1 MHz

C

iss

-

400 530

pF

Output capacitance

V

GS

= 0 V,

V

DS

= 25 V,

f

= 1 MHz

C

oss

-

85 130

Reverse transfer capacitance

V

GS

= 0 V,

V

DS

= 25 V,

f

= 1 MHz

C

rss

-

45 70

Turn-on delay time

V

DD

= 30 V,

V

GS

= 10 V,

I

D

= 3 A

R

GS

= 50

Ω

t

d(on)

-

10 15

ns

Rise time

V

DD

= 30 V,

V

GS

= 10 V,

I

D

= 3 A

R

GS

= 50

Ω

t

r

-

40 60

Turn-off delay time

V

DD

= 30 V,

V

GS

= 10 V,

I

D

= 3 A

R

GS

= 50

Ω

t

d(off)

-

55 75

Fall time

V

DD

= 30 V,

V

GS

= 10 V,

I

D

= 3 A

R

GS

= 50

Ω

t

f

-

30 40

P1-P3 P4-P6 P7-P9 P10-P10

BUZ32 H

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET N-Ch 200V 9.5A TO220-3

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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BUZ32 H