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BUZ32 H

P1-P3P4-P6P7-P9P10-P10
BUZ 32 H
Rev. 2.4
Page 4
2009-11-10
Electrical Characteristics,
at
T
j
= 25˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
Reverse Diode
Inverse diode continuous forward current
T
C
= 25 ˚C
I
S
-
-
9.5
A
Inverse diode direct current,pulsed
T
C
= 25 ˚C
I
SM
-
-
38
Inverse diode forward voltage
V
GS
= 0 V,
I
F
= 19 A
V
SD
-
1.4
1.7
V
Reverse recovery time
V
R
= 100 V,
I
F
=
l
S,
d
i
F
/d
t
= 100 A/µs
t
rr
-
200
-
ns
Reverse recovery charge
V
R
= 100 V,
I
F
=
l
S,
d
i
F
/d
t
= 100 A/µs
Q
rr
-
0.6
-
µC
BUZ 32 H
Rev. 2.4 Page 5 2009-11-10
Drain current
I
D
=
ƒ
(
T
C
)
parameter:
V
GS
≥
10 V
0
20
40
60
80
100
120
˚C
160
T
C
0
1
2
3
4
5
6
7
8
A
10
I
D
Power dissipation
P
tot
=
ƒ
(
T
C
)
0
20
40
60
80
100
120
˚C
160
T
C
0
10
20
30
40
50
60
W
80
P
tot
Safe operating area
I
D
=
ƒ
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25˚C
-1
10
0
10
1
10
2
10
A
I
D
10
0
10
1
10
2
V
V
DS
R
DS(on)
=
V
DS
/
I
D
DC
10 ms
1 ms
100 µs
10 µs
t
p
= 7.6µs
Transient thermal impedance
Z
th JC
=
ƒ
(
t
p
)
parameter:
D = t
p
/
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
t
p
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
BUZ 32 H
Rev. 2.4 Page 6 2009-11-10
Typ. output characteristics
I
D
=
ƒ(
V
DS
)
parameter:
t
p
= 80 µs
0
2
4
6
8
10
12
V
16
V
DS
0
2
4
6
8
10
12
14
16
18
A
22
I
D
V
GS
[V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot
= 75W
l 20.0
Typ. drain-source on-resistance
R
DS (on)
=
ƒ(
I
D
)
parameter:
V
GS
0
4
8
12
16
A
22
I
D
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Ω
1.3
R
DS (on)
V
GS
[V] =
a
4.0
V
GS
[V] =
a
a
4.5
b
b
5.0
c
c
5.5
d
d
6.0
e
e
6.5
f
f
7.0
g
g
7.5
h
h
8.0
i
i
9.0
j
j
10.0
k
k
20.0
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
≥
2 x
I
D
x
R
DS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
1
2
3
4
5
6
7
8
9
10
11
A
13
I
D
Typ. forward transconductance
g
fs
=
f
(
I
D
)
parameter:
t
p
= 80 µs,
V
DS
≥
2 x
I
D
x R
DS(on)max
0
2
4
6
8
A
12
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
S
6.0
g
fs
P1-P3P4-P6P7-P9P10-P10

BUZ32 H

Mfr. #:
Buy BUZ32 H
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 200V 9.5A TO220-3
Lifecycle:
New from this manufacturer.
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