www.austriamicrosystems.com Revision 1.00 4 - 15
AS1152
Data Sheet - Electrical Characteristics
6 Electrical Characteristics
DC Electrical Characteristics
(VCC = +3.0 to +3.6V, TA = -40 to +85°C , RL = 100Ω, f 150Mhz
Typical values are at VCC = +3.3V, TA = +25°C, Unless Otherwise Noted.)
1, 2
Notes:
1. Maximum and minimum limits over temperature are guaranteed by design and characterization. Devices are
100% tested at T
A = +25°C.
2. Currents into the device are positive, and current out of the device is negative. All voltages are referenced to
ground except V
OD.
3. Guaranteed by correlation data.
Table 3. DC Electrical Characteristics
Parameter Symbol Conditions Min Typ Max Unit
LVDS Output (OUtx+, OUTx-)
Differential Output Voltage
VOD
Figure 20 on page 12 250 370 450 mV
Change in Magnitude of VOD
Between Complementary Output
States
ΔVOD Figure 20 on page 12 1 35 mV
Offset Voltage
VOS
Figure 20 on page 12 1.125 1.25 1.375 V
Change in Magnitude of VOS
Between Complementary Output
States
ΔVOS Figure 20 on page 12 4 25 mV
Output High Voltage
VOH
1.6 V
Output Low Voltage
VOL
0.90 V
Differential Output Short-Circuit
Current
3
IOSD Enabled, VOD = 0
-9 mA
Output Short-Circuit Current
IOS
OUTx+ = 0 at INx = VCC or OUTx- = 0
at INx = 0, enabled
-3.8 -9 mA
Output High-Impedance
Current
IOZ
EN = low and ENn = high, OUTx+ = 0
or V
CC, OUTx- = 0 or VCC, RL =
-10 10 µA
Power-Off Output Current
IOFF
VCC = 0 or open, OUTx+ = 0 or 3.6V,
OUTx- = 0 or 3.6V, RL =
-20 20 µA
Inputs (INx, EN, ENn)
High-Level Input Voltage
VIH
2.0
VCC V
Low-Level Input Voltage
VIL
GND 0.8 V
Input Current
IIN INx, EN, ENn = 0 or VCC
-20 20 µA
Supply Current
No-Load Supply Current
ICC
RL = , INx = VCC or 0 for all
channels
4 6 mA
Loaded Supply Current
ICCL
RL = 100Ω, INx = VCC or 0 for all
channels
18 25 mA
Disabled Supply Current
ICCZ
Disabled, INx = VCC or 0 for all
channels, EN = 0, ENn = V
CC
3.5 5.5 mA
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AS1152
Data Sheet - Electrical Characteristics
Switching Characteristics
(VCC = +3.0 to +3.6V, RL = 100Ω ±1%, f 150MHz, TA = -40 to +85°C
Typical values are at V
CC = +3.3V, TA = +25ºC, Unless Otherwise Noted.)
1, 2, 3
Notes:
1. Parameters are guaranteed by design and characterization.
2. C
L includes probe and jig capacitance.
3. Signal generator conditions for dynamic tests: V
OL = 0, VOH = 3V, f = 100MHz, 50% duty cycle, RO = 50Ω,
t
R 1ns, tF 1ns (0 to 100%).
4. t
SKD1 is the magnitude difference of differential propagation delay. tSKD1 = |tPHLD - tPLHD|.
5. t
SKD2 is the magnitude difference of tPHLD or tPLHD of one channel to the tPHLD or tPLHD of another channel on
the same device.
6. t
SKD3 is the magnitude difference of any differential propagation delays between devices at the same VCC and
within 5°C of each other.
7. t
SKD4 is the magnitude difference of any differential propagation delays between devices operating over the
rated supply and temperature ranges.
8. f
MAX signal generator conditions: VOL = 0, VOH = 3V, 50% duty cycle, RO = 50Ω,
t
R 1ns, tF 1ns (0 to 100%).
9. Conforms to ANSI TIA/EIA 644 LVDS Standards 150MHz. Maximum operating frequency of 250MHz is pos-
sible using an AS1150 receiver.
Table 4. Switching Characteristics
Parameter Symbol Conditions Min Typ Max Unit
Differential Propagation Delay,
High-to-Low
t
PHLD
Figure 18 on page 11 and
Figure 19 on page 11
1.1 1.7 ns
Differential Propagation Delay,
Low-to-High
t
PLHD
Figure 18 on page 11 and
Figure 19 on page 11
1.1 1.7 ns
Differential Pulse Skew
4
tSKD1
Figure 18 on page 11 and
Figure 19 on page 11
0.04 0.35 ns
Differential Channel-to-Channel Skew
5
tSKD2
Figure 18 on page 11 and
Figure 19 on page 11
0.07 0.60 ns
Differential Part-to-Part Skew
6
tSKD3
Figure 18 on page 11 and
Figure 19 on page 11
0.13 0.8 ns
Differential Part-to-Part Skew
7
tSKD4
Figure 18 on page 11 and
Figure 19 on page 11
0.43 1.0 ns
Rise Time tTLH
Figure 18 on page 11 and
Figure 19 on page 11
0.2 0.39 2.6 ns
Fall Time tTHL
Figure 18 on page 11 and
Figure 19 on page 11
0.2 0.39 2.6 ns
Disable Time, High-to-Z t
PHZ
Figure 21 on page 12 and
Figure 22 on page 12
3 4 ns
Disable Time, Low-to-Z tPLZ
Figure 21 on page 12 and
Figure 22 on page 12
3 4 ns
Enable Time, Z-to-High tPZH
Figure 21 on page 12 and
Figure 22 on page 12
23ns
Enable Time, Z-to-Low t
PZL
Figure 21 on page 12 and
Figure 22 on page 12
23ns
Maximum Operating Frequency
8, 9
fMAX 250 MHz
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AS1152
Data Sheet - Typical Operating Characteristics
7 Typical Operating Characteristics
VCC = +3.3V, VCM = +1.2V, |VID| = 0.2V, CLOAD = 15pF, Tamb = +25ºC, unless otherwise noted
Figure 3. Output High Voltage vs. V
CC Figure 4. Output Low Voltage vs. VCC
Figure 5. Output Short-Circuit Current vs. VCC; Figure 6. Output High-Impedance State Current vs.
VIN = VCC or GND VCC; VIN = VCC or GND
1.4
1.402
1.404
1.406
1.408
1.41
3 3.1 3.2 3.3 3.4 3.5 3.6
Power-Supply Voltage (V)
Output High Voltage (V) .
VOUT-
VOUT+
1.06
1.065
1.07
1.075
1.08
3 3.1 3.2 3.3 3.4 3.5 3.6
Power-Supply Voltage (V)
Output Low Voltage (V) .
VOUT-
VOUT+
3.500
3.525
3.550
3.575
3.600
3.625
3.650
3.675
3.700
3 3.1 3.2 3.3 3.4 3.5 3.6
Power-Supply Voltage (V)
Output Short-Circuit Current (mA)
.
24
25
26
27
28
29
30
3 3.1 3.2 3.3 3.4 3.5 3.6
Power-Supply Voltage (V)
Output High-Z State Current (µA)
.

AS1152

Mfr. #:
Manufacturer:
ams
Description:
LVDS Interface IC
Lifecycle:
New from this manufacturer.
Delivery:
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