IRF8707PBF Datasheet IRF8707TRPBF, IRF8707PBF | P1-P3

www.irf.com 1

10/24/07

IRF8707PbF

HEXFET

®

Power MOSFET

Notes  through  are on page 9

Benefits

l Very Low Gate Charge

l Very Low R

DS(on)

at 4.5V V

GS

l Ultra-Low Gate Impedance

l Fully Characterized Avalanche Voltage

and Current

l 20V V

GS

Max. Gate Rating

l 100% tested for Rg

l Lead-Free

Applications

l Control MOSFET of Sync-Buck

Converters used for Notebook

Processor Power

l Control MOSFET for Isolated

DC-DC Converters in Networking

Systems

Top View

8

1

2

3

4

5

6

7

D

DG

S

A

S

A

SO-8

V

DSS

R

DS(on)

max

Qg

30V

11.9m @V

GS

= 10V

6.2nC

Description

The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are

critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC

converters that power the latest generation of processors for notebook and Netcom applications.

Absolute Maximum Ratin

g

s

Parameter Units

V

DS

Drain-to-Source Voltage

V

GS

Gate-to-Source Voltage

I

D

@ T

A

= 25°C

Continuous Drain Current, V

GS

@ 10V

I

D

@ T

A

= 70°C

Continuous Drain Current, V

GS

@ 10V

I

DM

Pulsed Drain Current

P

D

@T

A

= 25°C

Power Dissipation

P

D

@T

A

= 70°C

Power Dissipation

Linear Derating Factor W/°C

T

J

Operating Junction and

T

STG

Storage Temperature Range

Thermal Resistance

Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead

––– 20

R

θJA

Junction-to-Ambient

––– 50

°C/W

V

A

W

°C

Max.

11

9.1

88

± 20

30

-55 to + 150

2.5

0.02

1.6

PD - 96118A

IRF8707PbF

2 www.irf.com

S

D

G

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. T

y

p. Max. Units

BV

DSS

Drain-to-Source Breakdown Voltage 30 ––– ––– V

∆Β

V

DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 9.3 11.9

––– 14.2 17.5

V

GS(th)

Gate Threshold Voltage 1.35 1.80 2.35 V

∆

V

GS(th)

Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C

I

DSS

Drain-to-Source Leakage Current ––– ––– 1.0

––– ––– 150

I

GSS

Gate-to-Source Forward Leakage ––– ––– 100

Gate-to-Source Reverse Leakage ––– ––– -100

gfs Forward Transconductance 25 ––– ––– S

Q

g

Total Gate Charge ––– 6.2 9.3

Q

gs1

Pre-Vth Gate-to-Source Charge ––– 1.4 –––

Q

gs2

Post-Vth Gate-to-Source Charge ––– 0.7 –––

Q

gd

Gate-to-Drain Charge ––– 2.2 –––

Q

godr

Gate Charge Overdrive ––– 1.9 ––– See Figs. 15 & 16

Q

sw

Switch Char

g

e (Q

gs2

+ Q

gd

)

––– 2.9 –––

Q

oss

Output Charge ––– 3.7 ––– nC

R

g

Gate Resistance ––– 2.2 3.7 Ω

t

d(on)

Turn-On Delay Time ––– 6.7 –––

t

r

Rise Time ––– 7.9 –––

t

d(off)

Turn-Off Delay Time ––– 7.3 –––

t

f

Fall Time ––– 4.4 –––

C

iss

Input Capacitance ––– 760 –––

C

oss

Output Capacitance ––– 170 –––

C

rss

Reverse Transfer Capacitance ––– 82 –––

Avalanche Characteristics

Parameter Units

E

AS

Si

n

gl

e

P

u

l

se

A

va

l

anc

h

e

E

ner

gy

mJ

I

AR

A

va

l

anc

h

e

C

urrent

A

Diode Characteristics

Parameter Min. T

y

p. Max. Units

I

S

Continuous Source Current ––– –––

(Body Diode)

I

SM

Pulsed Source Current ––– –––

(

Bod

y

Diode

)

V

SD

Diode Forward Voltage ––– ––– 1.0 V

t

rr

Reverse Recovery Time ––– 12 18 ns

Q

rr

Reverse Recovery Charge ––– 13 20 nC

t

on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Conditions

See Fig. 18

Max.

53

8.8

ƒ = 1.0MHz

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 11A

MOSFET symbol

V

DS

= V

GS

, I

D

= 25µA

V

DS

= 16V, V

GS

= 0V

V

DD

= 15V, V

GS

= 4.5V

I

D

= 8.8A

V

DS

= 15V

V

GS

= 20V

V

GS

= -20V

V

DS

= 24V, V

GS

= 0V

T

J

= 25°C, I

F

= 8.8A, V

DD

= 15V

di/dt = 300A/

µ

s

T

J

= 25°C, I

S

= 8.8A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

V

GS

= 4.5V, I

D

= 8.8A

V

GS

= 4.5V

Typ.

–––

V

DS

= V

GS

, I

D

= 25µA

R

G

= 1.8

Ω

V

DS

= 15V, I

D

= 8.8A

V

DS

= 24V, V

GS

= 0V, T

J

= 125°C

µA

nA

I

D

= 8.8A

V

GS

= 0V

V

DS

= 15V

nC

ns

pF

m

Ω

A3.1

88 A

–––

IRF8707PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

vs. Temperature

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

-60 -40 -20 0 20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 11A

V

GS

= 10V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 10V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

BOTTOM 2.3V

≤

60µs PULSE WIDTH

Tj = 25°C

2.3V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.3V

≤

60µs PULSE WIDTH

Tj = 150°C

VGS

TOP 10V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

BOTTOM 2.3V

1 2 3 4 5 6

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 15V

≤

60µs PULSE WIDTH

IRF8707PBF

IRF8707PBF

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