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IRF8707PBF
P1-P3
P4-P6
P7-P9
IRF8707PbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.4
0.6
0.
8
1.0
1.2
1.
4
V
SD
, S
ource-t
o-Drai
n Vol
tage (V)
0.1
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 150°
C
V
GS
= 0V
1
10
100
V
DS
, D
rain-
to-S
ource Vol
tage (V
)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
1
10
100
V
DS
, D
rain-
to-S
ource Vol
tage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
T
A
= 25°
C
Tj
= 150°
C
Si
ngle P
ulse
100µsec
1msec
10msec
0123456
78
Q
G
,
Tot
al Gat
e Charge (
nC)
0.0
1.0
2.0
3.0
4.0
5.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 24V
V
DS
= 15V
I
D
= 8.
8A
IRF8707PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Threshold Voltage vs. Temperature
25
50
75
100
125
150
T
A
, A
mbient
Temperat
ure (°
C)
0
2
4
6
8
10
12
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-
006
1E-
005
0.0001
0.001
0.01
0.1
1
10
100
t
1
, R
ectangular
Pulse D
urati
on (sec)
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
°
C
/
W
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Ri (°C/W)
τ
i (sec)
2.2284 0.000169
7.0956 0.013738
25.4895 0.68725
15.1981 25.8
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
τ
A
τ
A
τ
4
τ
4
R
4
R
4
Notes:
1. D
uty
facto
r
D =
t / t
2
. Pe
ak T
=
P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
-75
-5
0
-25
0
25
50
75
100
125
150
T
J
, T
emperat
ure ( °C
)
1.0
1.3
1.6
1.9
2.2
2.5
V
G
S
(
t
h
)
,
G
a
t
e
T
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 25µA
I
D
= 250µA
IRF8707PbF
6
www.irf.com
Fig 13.
Maximum Avalanche Energy
vs. Drain Current
Fig 12.
On-Resistance vs. Gate Voltage
Fig 15.
Gate Charge Test Circuit
1K
VCC
DUT
0
L
S
20K
Fig 14.
Unclamped Inductive Test Circuit
and Waveform
t
p
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.
T
L
V
DS
+
-
V
DD
DRIV
ER
A
15V
20V
Fig 16.
Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs
1
Qgs
2
Qgd
Qgo
dr
2
4
6
8
10
12
14
16
18
20
V
GS,
Gat
e -to -S
ource Vol
tage (V
)
5
10
15
20
25
30
35
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 11A
T
J
= 25°
C
T
J
= 125°
C
25
50
75
100
125
150
St
arti
ng T
J
, Junct
ion T
emperature (
°C)
0
50
100
150
200
250
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 0.6
7A
0.82A
BOT
T
OM
8.80A
P1-P3
P4-P6
P7-P9
IRF8707PBF
Mfr. #:
Buy IRF8707PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V SINGLE N-CH 11.9mOhms 6.2nC
Lifecycle:
New from this manufacturer.
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