CY26049-22
Document #: 38-07730 Rev. ** Page 3 of 6
Absolute Maximum Conditions
Supply Voltage (V
DD
) ........................................–0.5 to +7.0V
DC Input Voltage...................................... –0.5V to V
DD
+ 0.5
Storage Temperature (Non-Condensing) ....–55°C to +125°C
Junction Temperature ................................ –40°C to +125°C
Data Retention @ Tj = 125°C................................ >10 Years
Package Power Dissipation...................................... 350 mW
ESD (Human Body Model) MIL-STD-883.................... 2000V
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Recommended Pullable Crystal Specifications
Parameter Name Comments Min. Typ. Max. Unit
F
NOM
Nominal crystal frequency Parallel resonance, fundamental mode,
AT cut
–10–MHz
C
LNOM
Nominal load capacitance – 14 – pF
R
1
Equivalent series resistance (ESR) Fundamental mode – – 25 Ω
R
3
/R
1
Ratio of third overtone mode ESR to
fundamental mode ESR
Ratio used because typical R
1
values
are much less than the maximum spec
3––
DL Crystal drive level No external series resistor assumed – 0.5 2 mW
F
3SEPLI
Third overtone separation from 3*F
NOM
High side 400 – – ppm
F
3SEPLO
Third overtone separation from 3*F
NOM
Low side – – –200 ppm
C
0
Crystal shunt capacitance – – 7 pF
C
0
/C
1
Ratio of shunt to motional capacitance 180 – 250
C
1
Crystal motional capacitance 14.4 18 21.6 fF
Recommended Operating Conditions
Parameter Description Min. Typ. Max. Unit
V
DD
Operating Voltage 3.15 3.3 3.45 V
T
AC
Ambient Temperature (Commercial Temperature) 0 – 70 °C
C
LOAD
Max Output Load Capacitance – – 15 pF
t
pu
Power-up time for all V
DD
s to reach minimum specified
voltage (power ramps must be monotonic)
0.05 – 500 ms
DC Electrical Specifications (Commercial Temp: 0°to 70°C)
Parameter Description Test Conditions Min. Typ. Max. Unit
I
OH
Output High Current V
OH
= V
DD
– 0.5, V
DD
= 3.3V (source) 12 24 – mA
I
OL
Output Low Current V
OL
= 0.5, V
DD
= 3.3V (sink) 12 24 – mA
V
IH
Input High Voltage CMOS Levels 0.7 – – V
DD
V
IL
Input High Voltage CMOS Levels – – 0.3 V
DD
I
IH
Input High Current V
IH
=V
DD
–510µA
I
IL
Input Low Current V
IL
=0V – 5 10 µA
C
IN
Input Capacitance – – 7 pF
I
DD
Supply Current C
LOAD
= 15 pF, V
DD
= 3.45V – – 45 mA
AC Electrical Specifications (Commercial Temp: 0° to 70°C)
Parameter Description Test Conditions Min. Typ. Max. Unit
f
ICLK-E
Frequency, Input Clock Input Clock Frequency, External Mode – 10 – MHz
LR FailSafe
Lock Range
[1]
Range of reference ICLK for Safe = High –250 – +250 ppm
DC = t
2
/t
1
Output Duty Cycle Duty Cycle defined in Figure 1, measured at 50% of V
DD
45 50 55 %
T
PJIT1
Clock Jitter Period Jitter, Peak to Peak, 10,000 periods – – 250 ps
RMS Period Jitter – – 50 ps
Note:
1. Dependent on crystals chosen and crystal specs.